Flash Lamp Annealing Method for Improving Adhesion Strength on the Dielectric Material and Reducing Substrate Warpage  

作　　者：Jong-Young Park Byeong-Jae Choi Young-Jae Kim Hideo Honma Joo-Hyong Noh 

机构地区：[1]Department of Materials and Surface Engineering,Graduate School of Engineering,Kanto Gakuin University,1162-2 Ogikubo,Odawara 250-0042,Japan [2]Materials and Surface Engineering Research Institute,Kanto Gakuin University,1162-2 Ogikubo,Odawara 250-0042,Japan [3]Daeduck Electronics Co.Ltd.,335,Somanggongwon-ro,Siheung-si,Gyeonggi-do 15106,Korea

出　　处：《材料科学与工程（中英文B版）》2019年第3期113-121,共9页Journal of Materials Science and Engineering B

摘　　要：Today’s electronic devices have required higher performance properties for 5G and artificial intelligence(AI).High-performance system on chip(SOC),graphic processing unit(GPU),and central processing unit(CPU)requires advanced packages to meet demands for performance,size,and high-speed transmission.To respond to these demands,integration approaches such as 3D IC chip stacking,package on package(PoP),2.5D interposer integration,system-in-package(SiP),and fan-out packaging technologies have emerged[6,8,11,12].Therefore,the package substrate for high-performance device will require low transmission loss and the small package warpage.Low loss materials have limitation of seed layer formation with electroless Cu plating.Also,heat treatment has major impact on substrate warpage in order for growth of plated Cu metal and curing for epoxy mold compound(EMC)process.In this paper,we believe it is possible to create a seed layer on the low-loss material by combining electroless Cu plating and flash lamp annealing(FLA)method instead of sputtering process.In terms of warpage control and metal growth,the flash lamp treatment,not the conventional convection or hot plate type heat treatment,could improve electro-migration between metal line and line through improving large number of(111)slip directions.In addition,flash lamp not only provides alternative to conventional heat treatment process but also significantly reduces substrate warpage.Through result of this study,by using FLA method for advanced package,it is possible to provide solutions in improving adhesion strength between dielectric materials and deposited metal film,and to reduce the warpage of the substrate.

关 键 词：High performance device advanced PACKAGE LOW-LOSS DIELECTRIC material WARPAGE control FLA 

分 类 号：TP3[自动化与计算机技术—计算机科学与技术]