液相外延碲镉汞薄膜表面的结晶类缺陷分析  

Analysis of Crystalline Defects on the Surface of HgCdTe Films by Liquid Phase Epitaxy

作　　者：杨海燕[1] 侯晓敏[1] 胡尚正[1] 刘铭[1] 曹鹏飞 赵硕 YANG Hai-yan;HOU Xiao-min;HU Shang-zheng;LIU Ming;CAO Peng-fei;ZHAO Shuo(North China Research Institute of Electro-optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所

出　　处：《红外》2019年第7期12-17,共6页Infrared

摘　　要：利用扫描电镜、能谱分析、光学轮廓仪以及金相显微镜等测试手段对 液相外延碲镉汞薄膜表面缺陷的形貌、成分和断面进行了分析,并研究了不同 种类表面缺陷的特征及来源。结果表明,液相外延碲镉汞薄膜表面上存在的结 晶类缺陷往往尺寸较大或成片分布,对后续器件产生明显影响。通过分析其成 因可以发现,母液均匀性的提升是减少该类缺陷和提高碲镉汞薄膜质量的关键。The morphology, composition and section of surface defects in HgCdTe films by liquid phase epitaxial were analyzed by means of scanning electron microscopy, energy spectrum analysis, optical profiler and metallographic microscope. The characteristics and sources of different types of surface defects are studied. The results show that the crystalline defects existing on the surface of HgCdTe films by liquid phase epitaxial are usually large or in sheet distribution, which have a significant impact on subsequent devices. By analyzing its causes, it can be found that the improvement of homogeneity of HgCdTe solution is the key to reducing such defects and improving the quality of HgCdTe films.

关 键 词：碲镉汞 结晶类缺陷 相分离 

分 类 号：TN304[电子电信—物理电子学]