基区表面掺杂浓度对NPN型晶体管电离辐射效应的影响  

Influence of Base Surface Doping Concentration on Ionizing Radiation Effect of NPN Bipolar Transistor

作　　者：李骏[1] 王健安[1,2] 吴雪 李兴冀[3] 杨剑群[3] 王志宽[1,2] LI Jun;WANG Jian-an;WU Xue;LI Xing-ji;YANG Jian-qun;WANG Zhi-kuan(No.24 Research Institute CETC,Chongqing 400060,China;National Key Laboratory of Analog Integrated Circuits,Chongqing 400060,China;Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]模拟集成电路重点实验室,重庆400060 [3]哈尔滨工业大学,哈尔滨150001

出　　处：《现代应用物理》2019年第3期54-58,共5页Modern Applied Physics

基　　金：强脉冲辐射环境模拟与效应国家重点实验室基金资助项目(SKLIPR1712)

摘　　要：针对不同基区表面掺杂浓度的NPN型晶体管,采用^60Coγ射线辐射源开展辐照实验,根据测得的电学参数及深能级瞬态谱,分析了NPN型晶体管的损伤效应机制。研究结果表明,在相同吸收剂量下,基区表面掺杂浓度高的NPN型晶体管比掺杂浓度低的NPN型晶体管对电离辐射更为敏感,其基极电流增幅更大;随着吸收剂量的增加,NPN型晶体管的电流增益退化程度加剧;在基区表面掺杂浓度高的NPN晶体管中,电离辐射诱导的氧化物电荷和界面态能级位置均更接近于禁带中央,导致复合率增大,从而使晶体管的电学性能退化程度加剧。In this paper,NPN bipolar junction transistors with different base surface doping concentrations are irradiated by using ^60Coγray with irradiation dose rate of 100 rad(Si)·s-1.The damage mechanism of the NPN transistors is analyzed according to the measured electrical parameters and deep level transient spectrum(DLTS).The results show that the NPN transistors with high base surface doping concentration are more sensitive to ionizing radiation than those with low base surface doping concentration under the same absorbed dose.With the increase of the absorbed dose,the degradation of current gain of the NPN transistors is more serious.In the NPN transistors with high base surface doping concentration,oxides induced by ionizing radiation are more sensitive than the NPN transistors with low base surface doping concentration,the DLTS energy levels are closer to the center of the forbidden band,which leads to the increase of recombination rate and the degradation of the transistor’s electrical performance.

关 键 词：NPN型晶体管 表面掺杂浓度 电离损伤 深能级瞬态谱 

分 类 号：TN431[电子电信—微电子学与固体电子学]