GaN体单晶的氨热生长及应力调控  

Ammonothermal Growth and Stress Control of Bulk GaN Single Crystals

作　　者：燕子翔 李腾坤 苏旭军 高晓冬 任国强 徐科[1,2] YAN Zi-xiang;LI Teng-kun;SU Xu-jun;GAO Xiao-dong;REN Guo-qiang;XU Ke(School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215000,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215000

出　　处：《人工晶体学报》2019年第9期1599-1603,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61574162,61604169)

摘　　要：采用氨热法在碱性条件下生长了GaN体单晶,SEM照片显示晶体表面有大量裂纹。用拉曼光谱测量GaN晶体的E2(high)声子拉曼峰,结果表明晶体内部应力波动较大。通过减小温度梯度、籽晶优选及降温程序优化后,得到了无裂纹的氮化镓晶体,(002)和(102)的X射线摇摆曲线FWHM分别为48 arcsec和54 arcsec,显微拉曼光谱表明经过工艺优化后的晶体应力显著降低,应力的来源主要为生长过程中杂质的引入。The bulk GaN crystals were grown by ammonothermal method under alkaline condition.SEM images show there are many cracks on the surface of GaN crystal.The E2(high)phonon mode scattering peak of GaN crystal was measured by Raman spectrometer(Raman).The stress of the crystal has obvious fluctuation.After the carefully selecting seed crystals,optimizing the procedure of temperature fall period and reducing the temperature difference,no-crack GaN crystals were abtained.XRD results show that the FWHM of(002)and(102)is about 48 arcsec and 54 arcsec respectively.The stress of the crystal was also greatly reduced by optimizing growth parameters.After optimizing the process,stress reduces obviously.The source of stress is mainly the incorporation of impurities in the growth process.

关 键 词：GaN晶体 氨热法 应力调控 

分 类 号：O782[理学—晶体学]