SoC嵌入式存储器内建自修复方法  

A memory built-in self-repair method for SoC design

作　　者：秦盼 王健[2] 朱芳 焦贵忠 QIN Pan;WANG Jian;ZHU Fang;JIAO Gui-zhong(North General Electronics Group Co.Ltd.,Bengbu 233030;PLA Representative Office in 9373 Factory,Bengbu 233030,China)

机构地区：[1]北方通用电子集团有限公司,安徽蚌埠233030 [2]中国人民解放军驻9373厂军事代表室,安徽蚌埠233030

出　　处：《计算机工程与科学》2019年第10期1749-1754,共6页Computer Engineering & Science

摘　　要：嵌入式存储器的内建自测试及修复是提高SoC芯片成品率的有效办法。详细描述了存储器良率的评估方法,提出了一种基于Mentor公司Tessent工具的存储器修复结构。该结构采用了冗余修复及电可编程熔丝eFuse硬修复的方法,具有很好的通用性及可行性,已多次应用在实际项目中。Built-in self-test and self-repair of embbeded memory is an effective method to improve the System-on-Chip(SoC)yield.The memory yield evaluation method is described in detail.A memory repair structure based on Tessent tool of Mentor corporation is proposed.This structure uses the redundant repair method and the efuse-based hard repair method.It has been applied to practical projects many times.

关 键 词：SOC 嵌入式存储器 内建自测试 内建自修复 

分 类 号：TN407[电子电信—微电子学与固体电子学]