氮等离子体处理的抑制用于改善钨填充（英文）  

Inhibition of N Plasma Treatment for the Improvement of Tungsten Gap Fill

作　　者：张念华 万先进 李远 许爱春 潘杰 左明光 胡凯 詹侃 宋锐 毛格 彭浩 李晓静 闫薇薇[1,4] 曾传滨[1,4] Zhang Nianhua;Wan Xianjin;Li Yuan;Xu Aichun;Pan Jie;Zuo Mingguang;Hu Kai;Zhan Kan;Song Rui;Mao Ge;Peng Hao;Li Xiaojing;Yan Weiwei;Zeng Chuanbin(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Yangtze Memory Technologies Co.,Ltd.,Wuhan 430200,China;School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100190,China;Key Laboratory of Silicon Device Technology,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]中国科学院微电子研究所,北京100029 [2]长江存储科技有限责任公司,武汉4302005 [3]中国科学院大学微电子学院,北京100190 [4]中国科学院硅器件技术重点实验室,北京100029

出　　处：《微纳电子技术》2019年第11期925-932,938,共9页Micronanoelectronic Technology

基　　金：National Natural Science Foundation of China(61804168);Youth Innovation Promotion Association of CAS(2015099)

摘　　要：在体钨生长过程中使用原位氮等离子体处理成功实现了无孔洞钨填充。通过氮等离子体处理,钨转化成了氮化钨,其作为抑制剂引起结构顶部钨薄膜的生长延迟。因此,消除了结构顶部薄膜封口,并且实现了无孔洞的钨薄膜生长。使用扫描电子显微镜(SEM)表征钨薄膜的填充能力。结果表明:开口有弓状形貌的结构,使用传统化学气相沉积(CVD)方式生长钨薄膜非常容易导致孔洞;而利用氮等离子体处理能够获得没有孔洞的钨填充。引入扫描透射电子显微镜(STEM)解释氮等离子体处理的机理,同时对体钨生长延迟时间与氮等离子体处理的时间、氮气体积流量、乙硼烷通气时间、体钨生长温度的关系进行了研究。The void-free W gap fill was successfully achieved by using the in situ N plasma treat-ment during the bulk W deposition.With the N plasma treatment,W was transformed to WN x,acting as the inhibitor to induce the growth delay of structure top W film.Therefore,the struc-ture overhang was eliminated and the void-free W film was obtained.The scanning electron mi-croscope(SEM)was utilized to characterize the W gap fill performance.The result shows that with the opening-bowing structure,the conventional chemical vapor deposition(CVD)method for the growth of the W film easily leads to serious void;while in the case of applying the N plas-ma treatment,the W gap fill can get good performance without the void.To illustrate the N plas-ma treatment mechanism,the scanning transmission electron microscope(STEM)was intro-duced,and meanwhile the relationship between the bulk W deposition delay time and the N plas-ma treatment time,N2 volume flow rate,B2H6 flush time and bulk deposition temperature was investigated.

关 键 词：钨填充 孔洞 氮等离子体处理 氮化钨薄膜 延迟时间 乙硼烷(B2H6) 

分 类 号：TB3[一般工业技术—材料科学与工程]