复合络合剂在阻挡层抛光液中的应用  

Application of Compound Complexing Agent in Barrier Layer Polishing Slurry

作　　者：张辉辉 刘玉岭 王辰伟 曾能源 王聪 徐奕 马腾达 刘国瑞 Zhang Huihui;Liu Yuling;Wang Chenwei;Zeng Nengyuan;Wang Cong;Xu Yi;Ma Tengda;Liu Guorui(School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《半导体技术》2019年第11期870-875,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2009ZX02308,2016ZX02301003-004-007);河北省自然科学基金青年基金资助项目(F2015202267);天津市自然科学基金资助项目(16JCYBJC16100);河北工业大学优秀青年科技创新基金资助项目(2015007)

摘　　要：分别选用FA/OⅡ型螯合剂和柠檬酸钾(CAK)单独配置及复合配置多层铜布线阻挡层抛光液,对Cu和正硅酸乙酯(TEOS)介质层进行化学机械抛光(CMP),研究复合络合剂对材料去除速率、碟形坑和蚀坑的影响。结果表明,单独使用FA/OⅡ型螯合剂配置抛光液时,随着螯合剂的增加,Cu去除速率明显增加,而TEOS去除速率趋于减小;单独使用CAK配置抛光液时,随着CAK的增加,Cu去除速率缓慢增加,而TEOS去除速率明显增加;使用FA/OⅡ型螯合剂和CAK复合配置(质量分数分别为20%和3%)阻挡层抛光液,可以得到较高的Cu和TEOS去除速率,Cu和TEOS去除速率选择比为1∶1.8,碟形坑和蚀坑深度分别从69.8 nm和45.5 nm修正为25.6 nm和16.7 nm,铜表面粗糙度由原来的7.11 nm降至1.27 nm。该阻挡层抛光液稳定时间为72 h,其稳定性满足工业化要求。The FA/O Ⅱ type chelating agent and potassium citrate(CAK) were used separately and in combination to configure the multilayer copper wiring barrier layer polishing slurry for Cu and tetraethyl orthosilicate(TEOS) chemical mechanical polishing(CMP). The effects of the compound complexing agent on the material removal rate, dishing pit and erosion pit were studied. The results show that when the polishing slurry is configured with FA/O Ⅱ type chelating agent alone, the removal rate of Cu increases significantly with the increase of FA/O Ⅱ type chelating agent, and the removal rate of TEOS tends to decrease. When CAK is used to configure the polishing slurry alone, the removal rate of Cu increases slowly with the increase of CAK, while the removal rate of TEOS increases obviously. When the FA/O Ⅱ type chelating agent and CAK(the mass fraction of 20% and 3% respectively) compound are used to configure barrier layer polishing slurry, a higher Cu and TEOS removal rate can be obtained. The Cu and TEOS removal rate selection ratio is 1∶1.8, the depth of the dishing pit and erosion pit are corrected from 69.8 nm and 45.5 nm to 25.6 nm and 16.7 nm, respectively, and the copper surface roughness reduces from 7.11 nm to 1.27 nm. The barrier layer polishing slurry has a stabilization time of 72 h, and its stability satisfies industrial requirements.

关 键 词：化学机械抛光(CMP) 复合络合剂 去除速率 碟形坑 蚀坑 

分 类 号：TN305.2[电子电信—物理电子学]