一种非对称双栅应变硅HALO掺杂沟道MOSFET阈值电压解析模型  

An Analytical Model of Threshold Voltage for the Asymmetrical Double-Material-Gate Strained Si HALO Doping Channel MOSFET

作　　者：辛艳辉 段美霞 XIN Yan-hui;DUAN Mei-xia(School of Physics and Electronics,North China University of Water Resources and Electric Power,Zhengzhou,Henan 450046,China)

机构地区：[1]华北水利水电大学物理与电子学院

出　　处：《电子学报》2019年第11期2432-2437,共6页Acta Electronica Sinica

基　　金：河南省科技公关项目(No.172102210367,No.192102210241);华北水利水电大学高层次人才科研启动项目

摘　　要：提出了一种非对称双栅应变硅HALO掺杂沟道金属氧化物半导体场效应管结构.该器件前栅和背栅由两种不同功函数的金属构成,沟道为应变硅HALO掺杂沟道,靠近源区为低掺杂区域,靠近漏区为高掺杂区域.采用分区的抛物线电势近似法和通用边界条件求解二维泊松方程,分别求解了前背栅表面势、前背栅表面电场及前背栅阈值电压,建立了双栅器件的表面势、表面电场和阈值电压解析模型.详细讨论了物理参数对解析模型的影响.研究结果表明,该器件能够很好的抑制短沟道效应、热载流子效应和漏致势垒降低效应.模型解析结果与DESSIS仿真结果吻合较好,证明了该模型的正确性.The asymmetrical double-material-gate s-Si(strained Silicon) HALO doping channel MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor) structure is proposed.The front gate and back gate are composed of two metals with different work functions.It has the higher doping concentration in the HALO doping channel end near the drain.The two-dimensional Poisson’s equation is solved by applying the parabolic potential approximation and the suitable boundary condition.The analytical models of surface potential、surface electric field and threshold voltage for the double-material-gate device are constructed by solving which of the front gate and back gate.Results show that the proposed novel device is expected to suppress the short channel effect、hot carrier effect and drain induced barrier lowering.The derived analytical models accord with the DESSIS simulation results very well.

关 键 词：应变硅 HALO掺杂沟道 非对称双栅 短沟道效应 

分 类 号：TN386[电子电信—物理电子学]