面向低功耗高频应用的40 nm MOSFET漏极电流噪声建模  

Drain Current Noise Modeling of 40 nm MOSFET for Low-power and High-frequency Application

作　　者：徐振洋 李博[1] 王军[1] XU Zhenyang;LI Bo;WANG Jun(School of Information Engineering,Southwest University of Science and Technology Mianyang,Sichuan,621010,CHN)

机构地区：[1]西南科技大学信息工程学院

出　　处：《固体电子学研究与进展》2019年第5期329-332,共4页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(69901003);四川省教育厅科研资助项目(18ZA0502)

摘　　要：针对40 nm MOSFET和表征其噪声机理的漏极电流噪声进行了研究,从强反型区到弱反型区对高频特性进行了测量和分析,建立了一个基于物理的40 nm MOSFET漏极电流噪声简洁模型。77 K和300 K温度条件下的研究结果表明:在低压弱相互作用条件下,40 nm MOSFET的高频噪声机理由受抑制的散粒噪声转变为热噪声。这个噪声机理的发现有利于纳米级MOSFET在弱反型区的高频建模和低功耗应用。The drain current noise of 40 nm MOSFET characterizing the noise mechanism was studied.The high frequency characteristics were measured and analyzed from the strong inversion region to the weak inversion region.A compact model of drain current noise of 40 nm MOSFET based on physics was modeled.The experimental results at 77 K and 300 K show that the high frequency noise mechanism of 40 nm MOSFET is changed from suppressed shot noise to thermal noise under the condition of weak interaction at low voltage.This discovery of the noise mechanism of 40 nm MOSFET is very helpful for the future demand of high frequency modeling of nanoscale MOSFET in weak inversion region and low power applications.

关 键 词：纳米MOSFET 弱反型区 噪声机理 低功耗 高频 

分 类 号：TN386.1[电子电信—物理电子学]