电弧离子镀/磁控溅射复合真空退火制备Ti2AlC涂层  

Preparation of Ti2AlC coating by electric arc plating/magnetron sputtering and vacuum annealing

作　　者：胡小刚[1] 董闯[1] 杨红艳[2] 张瑞谦[2] HU Xiao-gang;DONG Chuang;YANG Hong-yan;ZHANG Rui-qian(Key Laboratory of Materials Modification by Laser,Ion and Electron Beams of the Ministry of Education,School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]三束材料改性教育部重点实验室,大连理工大学材料科学与工程学院,辽宁大连116024 [2]反应堆燃料及材料重点实验室,中国核动力研究设计院,四川成都610200

出　　处：《电镀与涂饰》2019年第21期1160-1165,共6页Electroplating & Finishing

摘　　要：采用自主研发的大弧源技术,复合中频磁控溅射石墨靶,避免H元素的引入,在锆合金表面快速沉积了致密、超厚(约20μm)的Ti-Al-C涂层.经过不同温度(550、650、750和850℃)和时间(1、2和3 h)的真空退火后发现,至少在650℃才能获得Ti2AlC结构,更高的温度会加速Ti2AlC的生成.高温沉积对制备Ti2AlC相涂层而言是必备的.A compact and ca.20μm-thick Ti-Al-C coating was fast deposited by the combination of a self-developed large arc source technology and mid-frequency magnetron sputtering which supplied C element to avoid the incorporation of H element,and then annealed in vacuum at different temperatures(550,650,750,and 850℃)for different time(1,2,and 3 h).It was found that Ti2AlC structure could be formed when the heat treatment temperature was at least 650℃.Higher heat treatment temperature accelerated the generation of Ti2AlC.High temperature is necessary to the synthesis of Ti2AlC phase coating.

关 键 词：碳化铝钛 金属陶瓷 电弧离子镀 磁控溅射 真空退火 温度 微观结构 

分 类 号：TG174.444[金属学及工艺—金属表面处理]