Cr薄膜沉积速率对AlGaInP发光二极管电压的影响  

Effect of Cr Film Deposition Rate on Forward Voltage of AlGaInP Light-emitting

作　　者：肖和平 朱迪 XIAO Heping;ZHU Di(Yangzhou Changelight Co.Ltd.Yangzhou 225101,China)

机构地区：[1]扬州乾照光电有限公司

出　　处：《材料科学与工程学报》2019年第5期823-827,共5页Journal of Materials Science and Engineering

摘　　要：研究了在Si基片上沉积Cr薄膜的沉积速率对薄膜残余应力、晶粒尺寸的影响,并进一步讨论薄膜电阻率与残余应力、晶粒尺寸的关系,该电阻率主要由电子在薄膜晶粒内运动及穿越薄膜晶界运动受到阻力而形成。结果表明:薄膜电阻率随残余应力、晶粒尺寸的增加而变小。基于这一实验结果可以改善AlGaInP的LED正向工作电压。The effect of deposition rate on residual stress and grain size of the Cr films on Si substrate was invetigated. The film resistivity, residual stress and grain size were measured and their relariohship was discussed. Resistivity is mainly caused by the resistance inside the film grain and the resistance of the interface between neighboring grains. Results show that resistivity of film decreases with the increase of residual stress and grain size. Based on the experimental results reduction of the AlGaInP LED forward voltage can be expected.

关 键 词：薄膜沉积速率 金属薄膜 晶粒尺寸 残余应力 正向电压 

分 类 号：O484.5[理学—固体物理]