高压大电流MOSFET驱动器失效分析  

Failure analysis of high voltage large current MOSFET driver

作　　者：许伟达 潘潇雨 许砾 廖志辉 刘伟 Xu Weida;Pan Xiaoyu;Xu Li;Liao Zhihui;Liu Wei(Shanghai Precision Measurement and Test Instititue,Shanghai 201109,China)

机构地区：[1]上海精密计量测试研究所

出　　处：《国外电子测量技术》2019年第10期141-146,共6页Foreign Electronic Measurement Technology

摘　　要：为了保障军工、航天设备的可靠性,必须对其采用的高压大电流金属-氧化物半导体场效应晶体管(MOSFET)驱动器器件进行可靠性筛选测试[1-2]。介绍了MOS场效应晶体管制作的门电路驱动器的基本原理以及高压大电流MOSFET驱动器电路的主要参数和测试方法。重点介绍了测试设备在测试此类器件的电源电流过程,如果采用不同种类的仪表可能会产生瞬间大电流,造成器件击穿损坏的问题,面对器件这样的黑匣子,依据被测器件测试数据推理,合理解释测试过程中发生的问题,并对该类器件的击穿机理进行了失效分析,提出了如何在器件电源电流测试中避免造成器件损坏的方法,利用此方法解决此类器件的测试开发。In order to ensure the reliability of military and aerospace equipment,it is necessary to conduct reliability test on high-voltage,high-current MOSFET driver devices.This paper introduces the basic theory of gate driver using metal Oxide Semiconductor Field Effect Transistor and the test method of main parameter of high-voltage high-current MOSFET drive circuit.Mainly introduced test equipment in measuring power supply current,if using different kinds of instrument may produce instantaneous large current to breakdown the devices.Face to such a device black box,explains the problems in test based on the basis of test data,Analyses the reason of breakdown,and introduces the way to avoid it.Resolve this kind devices test development using this method.

关 键 词：MOSFET 驱动器 测试方法 失效分析 

分 类 号：TN46[电子电信—微电子学与固体电子学]