氮化物半导体量子点核-壳结构杂质态的结合能  

Binding Energies of Impurity States in a Core-shell Structure of Nitride Semiconductor Quantum Dots

作　　者：李硕 石磊[1] 闫祖威[1] LI Shuo;SHI Lei;YAN Zu-wei(College of Science,Inner Mongolia Agricultural University,Hohhot 010018,China)

机构地区：[1]内蒙古农业大学理学院

出　　处：《内蒙古大学学报（自然科学版）》2019年第6期604-609,共6页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(11364028,11664030);内蒙古自然科学基金重大项目(2013ZD02)资助;内蒙古"草原英才"工程资助项目

摘　　要：在连续介电模型和有效质量近似下,采用变分法从理论上研究了GaN/AlxGa1-xN量子点核-壳结构中杂质态结合能,计算了该结构中杂质态结合能随量子点核-壳结构核尺寸、壳尺寸、Al组分以及杂质位置的变化关系.结果表明:杂质态结合能随着量子点半径(核和壳尺寸)的增加单调减小;当杂质位置到量子点中心距离d增加时,杂质态结合能呈现先增大后减小的趋势,出现一极大值;杂质态结合能随Al组分的变化受杂质位置影响较大,呈现不同的变化趋势,且变化比较明显.The binding energies of impurity states in GaN/AlxGa1-xN quantum dot core-shell structures are studied theoretically by a variational method under the continuous dielectric model and the effective mass approximation.The dependence of the binding energies of impurity states on the core size,shell size,Al component and impurity location of the core-shell structure is calculated.The results show that the binding energies of impurity states decrease monotonically with increasing radius of the quantum dot(core and shell size).When the distance between the center of the quantum dot and the impurity position increases,the binding energies of the impurity states first increase and then decrease,and appear a maximum value.The binding energies of the impurity states are greatly affected by the location of the impurity with the change of the Al component,showing different trends,and the change is obvious.

关 键 词：球形量子点 杂质态 结合能 

分 类 号：O471.3[理学—半导体物理]