深亚微米SOI工艺NMOS器件瞬时剂量率效应数值模拟  

Numeric simulation of NMOS transient dose rate effect based on sub-micro SOI

作　　者：薛海卫[1] 张猛华[1] 杨光安 Xue Haiwei;Zhang Menghua;Yang Guang′an(The 58th Institute of China Electronics Technology Group Corp.,Wuxi 214035,China;Southeast University,Nanjing 210001,China)

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035 [2]东南大学,江苏南京210001

出　　处：《电子技术应用》2019年第12期59-61,66,共4页Application of Electronic Technique

摘　　要：为了研究深亚微米SOI工艺NMOS器件的瞬时剂量率效应,采用TCAD工具对0.13μm SOI工艺H型NMOS器件进行三维建模仿真。选取γ剂量率在1×10^8~1×10^10(Gy(Si)/s)的7个点,模拟了H型NMOS器件开关两种状态下的漏电流及体接触端电流与γ剂量率之间的数值关系。从模拟结果可以看出,γ剂量率在小于5×10^9 Gy(Si)/s的辐照时对器件影响很小。表明了该结构器件具有较强的抗瞬时剂量率辐射能力,为超大规模集成电路抗瞬时剂量率加固设计提供了依据。For researching the transient dose rate effect of the H-type NMOS based on submicro SOI technology,the 3D modeling and numeric simulation of the 0.13μm SOI NMOS is processed using TCAD tool.The relationship between the transient dose rate and the currents of drain and body-contact of the NMOS is released by using seven points which theγ-transient dose rate ranges from 1×10^8 to 1×10^10(Gy(Si)/s).From the simulation results,we can concluded that there is little influence on the device when theγ-transient dose rate is less than 5×10^9 Gy(Si)/s.The H-type NMOS device has strong ability of anti-transient dose rate radiation.The results of H-type NMOS through 3D numeric simulation provide the reference for rad-hard design in VLSI.

关 键 词：瞬时剂量率效应 三维数值模拟 深亚微米SOI H型NMOS 

分 类 号：TN31[电子电信—物理电子学] TL99[核科学技术—核技术及应用]