δ-掺杂Be受主GaAs/AlAs多量子阱的空穴共振隧穿（英文）  

Resonant Tunneling of Holes Through δ-doped Be Acceptor GaAs/AlAs Multiple Quantum Wells

作　　者：郑卫民 黄海北 李素梅 丛伟艳 王爱芳 李斌[4] 宋迎新[5] ZHENG Wei-min;HUANG Hai-bei;LI Su-mei;CONG Wei-yan;WANG Ai-fang;LI Bin;SONG Ying-xin(School of Space Science and Physics,Shandong University(Weihai),Weihai 264209,China;School of Chemistry and Chemical Engineering,Shandong University,Jinan 250100,China;School of Mechanical,Electrical&Information Engineering,Shandong University(Weihai),Weihai 264209,China;Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;Jinan Semiconductor Research Institute,Jinan 250014,China)

机构地区：[1]山东大学(威海)空间科学与物理学院,山东威海264209 [2]山东大学化学与化学工程学院,山东济南250100 [3]山东大学(威海)机电与信息工程学院,山东威海264209 [4]中国科学院上海技术物理研究所,上海200083 [5]济南市半导体元件实验所,山东济南250014

出　　处：《发光学报》2019年第11期1373-1379,共7页Chinese Journal of Luminescence

基　　金：Supported by Shandong Province Natural Science Foundation(ZR2017MF018);National Natural Science Foundation of China(61675223)~~

摘　　要：三个具有不同量子阱宽度的GaAs/AlAs多量子阱结构样品通过分子束外延生长设备生长在半绝缘的(100)p-型GaAs衬底上,并且在量子阱层结构的生长过程中,在GaAs阱层中央进行了Be受主的δ-掺杂。基于这3个结构样品,通过光刻技术和半导体加工工艺制备了相应的两端器件。在4~200 K的温度范围内,我们分别测量了器件的电流-电压特征曲线,清楚地观察到了重、轻空穴通过δ-掺杂Be受主GaAs/AlAs多量子阱结构的共振隧穿现象。发现随着GaAs量子阱层宽的逐渐减小,轻空穴的共振隧穿峰向着高电压方向移动,这个结果和通过AlAs/GaAs/AlAs双势垒结构模型计算的结果是一致的。然而,随着测量温度的进一步升高,两个轻空穴共振峰都朝着低电压的方向移动,并且在150 K温度下,其中一个共振遂穿峰表现为一种振动模式。Three samples of Ga As/Al As multiple quantum wells with different quantum-well widths are grown on semi-insulating(100)p-type Ga As substrates by the molecular beam epitaxy with Be acceptorsδ-doped at the center of Ga As well layers.Three corresponding two-terminal devices are fabricated by photolithographic and semiconductor manufacturing technologies based on these samples.The device current-voltage characteristics are measured at temperatures in a range of 4-200 K.The resonant tunneling of heavy-and light-holes through Beδ-doped Ga As/Al As multiple quantum wells are clearly observed.It is found that the position of resonant tunneling for light-heavy holes shifts to higher voltage with decreasing quantum-well sizes,which is in good agreement with the results calculated by the Al As/Ga As/Al As double-barrier theoretical model.However,as the measured temperatures increase,two peaks of resonant tunneling of light-holes move toward lower voltage,while one of the resonant peaks behaves as an oscillating mode at 150 K.

关 键 词：共振隧穿 重空穴和轻空穴 GaAs/AlAs多量子阱 电流-电压特征 δ-掺杂 

分 类 号：O472.4[理学—半导体物理]