Cu薄膜上热氧化法制备CuAl2O4薄膜  

Synthesis and Characterizationof CuAl2O4 Thin Films by Deposition and Thermal Oxidation of Cu-Coatings on Al2O3 Disc

作　　者：刘伟[1] 王利双 Liu Wei;Wang Lishuang(Institute of Electronic Engineering,CAEP,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院电子工程研究所

出　　处：《真空科学与技术学报》2019年第11期1017-1020,共4页Chinese Journal of Vacuum Science and Technology

基　　金：中科院超精密加工技术重点实验室资助(项目编号:ZD18001)

摘　　要：采用离子束辅助沉积方法在95%(质量比)Al2O3基板上制备Cu薄膜,利用热氧化法使Cu薄膜氧化,并与Al2O3基板反应,制备出CuAl2O4薄膜。通过X射线衍射仪、扫描电子显微镜、能谱仪和X射线光电子能谱仪分别对CuAl2O4薄膜的结构、成分和微观形貌进行了表征。研究结果表明,大气环境下,热氧化温度低于1000℃时,薄膜主要成分为CuO,随着热氧化温度的提升,薄膜成分比例并无较大变化,但是薄膜晶粒在不断增大;热氧化温度为1000℃时,氧化后的Cu薄膜与Al2O3基板开始反应形成CuAl2O4晶体。当热氧化温度为1100℃时反应更加完全,形成纯度较高的CuAl2O4薄膜,且薄膜晶粒尺寸明显增大,薄膜表面Al元素含量增加。The CuAl2O4 thin films were synthesized by thermal oxidation of the Cu coatings,grown by ion beam assisted deposition on 95%(wt)Al2O3 substrate.The influence of the oxidation temperature in air on the microstructures,phases-structures and properties of the CuAl2O4 coating was investigated with X-ray diffraction,scanning electron microscopy,energy dispersive spectroscopy and X-ray photoelectron spectroscopy.The results show that the thermal oxidation temperature had a major impact.As the oxidation temperature increased from 1000 to 1100℃,the emerging CuAl2O4 phase increasingly replaced the dominant CuO phase,accompanied by grain-size growth.At 1100℃,the highly pure CuAl2O4 phase dominates the coatings with fairly large grains and with an increase of Al-content on the surfaces.

关 键 词：Cu薄膜 CuAl2O4薄膜 离子束辅助沉积 热氧化法 

分 类 号：TG[金属学及工艺]