工艺参数对磁控溅射TiN膜结构的影响  

The Effect of Process Parameters on the Structure of Magnetron Sputtering TiN Films

作　　者：王槐乾 姜宏伟[1] 王方标 黄海亮[1] 左桂鸿[1] 王丹[1] 郑友进[1] WANG Huaiqian;JIANG Hongwei;WANG Fangbiao;HUANG Hailiang;ZUO Guihong;WANG Dan;ZHENG Youjin(Mudanjiang Normal College,Mudanjiang 157000,China)

机构地区：[1]牡丹江师范学院

出　　处：《电镀与精饰》2019年第12期20-24,共5页Plating & Finishing

基　　金：黑龙江省自然科学基金(LH2019E126);黑龙江省教育厅项目(1352ZD002);牡丹江师范学院创新创业特色项目项目(CY2018020)

摘　　要：为研究工艺参数在磁控溅射中对TiN薄膜生长的影响,通过改变工艺参数使用直流磁控溅射设备在N2流量5 sccm,N2压强为5 Pa生长TiN薄膜。采用射频磁控溅射法在N2流量5 sccm、N2压强5 Pa等生长参数下,制备了TiN薄膜。采用电子扫描显微镜(SEM)、X射线衍射仪(XRD)对样品进行了分析,结果显示样品具有纳米级TiN薄膜的基本特征。实验表明,气氛中过多Ti原子的存在,影响了Ti原子和N原子的结合,也不利于TiN薄膜的生长。To study the effect of process parameters on the growth of TiN films in magnetron sputtering,the TiN film was grown by changing the process parameters using a DC magnetron sputtering apparatus at a flow rate of N2 of 5 sccm and a pressure of N2 of 5 Pa.TiN films were prepared by RF magnetron sputtering at growth parameters of N2 flow rate 5 sccm and N2 pressure 5 Pa.The samples were analyzed by scanning electron microscopy(SEM)and X-ray diffractometry(XRD).The results show that the samples have the basic characteristics of nano-scale TiN films.Experiments show that the presence of excessive Ti atoms in the atmosphere affects the bonding of Ti atoms and N atoms,and is also detrimental to the growth of TiN films.

关 键 词：磁控溅射 TIN 微观形貌 

分 类 号：TB742[一般工业技术—材料科学与工程]