N2流量对HiPIMS制备Al-N共掺杂ZnO薄膜的性能影响  

Effects of Nitrogen Flow Rate on the Properties of Al-N Co-doped ZnO Films Grown by High Power Impulse Reactive Magnetron Sputtering

作　　者：李倩[1] 张玉琛 王正铎[1] 杨丽珍[1] 张海宝[1] 刘忠伟[1] 陈强[1] LI Qian;ZHANG Yuchen;WANG Zhengduo;YANG Lizhen;ZHANG Haibao;LIU Zhongwei;CHEN Qiang(Lab of Plasma Physics and Materials,Beijing Institute of Graphic Communication,Beijing 102600,China)

机构地区：[1]北京印刷学院等离子体物理与材料研究室

出　　处：《真空与低温》2019年第6期361-367,共7页Vacuum and Cryogenics

基　　金：国家自然科学基金（11775028、11505013、11605012、11875090）;北京市自然科学基金（4162024）;北京市自然科学基金重点项目（KM201510015009）;北京市协同创新项目（No.20160113）

摘　　要：采用高功率脉冲反应磁控溅射(HiPIMS)在玻璃基底上沉积Al-N共掺氧化锌(ZnO)薄膜,研究氮气(N2)流量对Al-N共掺杂ZnO薄膜的晶体结构、表面形貌和电学性质的影响。测量结果表明,N2流量对掺杂的ZnO薄膜电导率类型转变和光电性能有很大影响:当N2流量为8 mL/min时,掺杂ZnO薄膜在可见光波段透过率大于85%,薄膜导电类型为n型;随着N2流量的增加,薄膜经历n-p-n型的转变过程。当N2流量为20 mL/min时,掺杂的ZnO结晶性最好,晶体缺陷少、XRD衍射峰半峰宽(FWHM)最小、表面粗糙度也低,为p-ZnO。薄膜电学性能测量显示:载流子浓度、迁移率、电阻率分别为5.47×10^17 cm^-3、2.7 cm^2/Vs、4.51Ωcm。Al-N co-doped ZnO thin films were grown on glass substrate by high power reactive magnetron sputtering(HiPIMS).We focus on the effects of nitrogen flow rate on the structure,morphology,and electrical properties of Al-N codoped ZnO thin films.The results show that the nitrogen flow rate plays an important role on the n-p type transformation and electrical properties of the conductivity type of Al-N co-doped ZnO thin films.When N2=8 mL/min,the co-doped film is n-type.As the nitrogen fluxes was increasing,the carrier concentration was increased,and the film switched from ntype to p-type and then to n-type.In addition,the transmittance of Al-N co-doped ZnO film was as high as 85%in the visible light region.As 20 mL/min N2 was introduced,the Al-N co-doped ZnO film exhibits a good p-type conductivity with the resistivity of 4.51Ωcm,a carrier concentration of 5.47×10^17 cm^-3 and a Hall Mobility of 2.7 cm^2/Vs.

关 键 词：高功率脉冲反应磁控溅射 氧化锌 Al-N共掺 p型导电 

分 类 号：O539[理学—等离子体物理] O484[理学—物理]