InP基近红外单光子雪崩光电探测器阵列  

Indium Phosphide-Based Near-Infrared Single Photon Avalanche Photodiode Detector Arrays

作　　者：刘凯宝 杨晓红[1,2] 何婷婷 王晖[1,2] Liu Kaibao;Yang Xiaohong;He Tingting;Wang Hui(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100086,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100086 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《激光与光电子学进展》2019年第22期1-12,共12页Laser & Optoelectronics Progress

基　　金：国家重点研发计划（2016YFB0402404）;国家自然科学基金（61774152）

摘　　要：单光子雪崩光电探测器(SPAD)具有雪崩增益大、响应速度快、探测效率高、易于集成的特点。SPAD阵列器件可进行弱光三维成像,在生物化学、量子通信、激光雷达等领域具有重要应用。因此开展SPAD器件及阵列探测技术的研究具有非常重要的意义。给出了近红外InGaAs/InP SPAD单元工作原理和阵列结构性能,对暗计数率、探测效率、后脉冲等主要影响因素和器件优化方向进行总结,概述了近年来SPAD阵列器件的主要技术方案,给出了串扰来源和消除方法,并对相关研究单位的技术与结果进行对比。A single photon avalanche photodiode detector(SPAD)has many advantages such as large avalanche gain,fast response,high detection efficiency,and easy integration.SPAD array devices can be used for low-light three-dimensional imaging;these devices have important applications in fields such as biochemistry,quantum communication,and lidar.Therefore,it is significant to study the detection technology of SPAD and its array.In this paper,we review and present the working principle and array structure performance of a near-infrared InGaAs/InP SPAD unit.We analyze the major influencing factors such as the dark counting rate,detection efficiency,and after pulses;moreover,we investigate the main direction for device optimization.Further,the main technical schemes of the SPAD array devices used in recent years have been summarized.We provide the sources of crosstalk and methods for eliminating crosstalk.In addition,we compare the technologies used and the results of relevant research institutions.

关 键 词：探测器 雪崩光电二极管 阵列 红外波段 三维成像 

分 类 号：TN36[电子电信—物理电子学]