LPCVD法淀积SiO2薄膜的影响因素分析  

Analysis of Influencing Factors of SiO2 thin Films Deposited by LPCVD Method

作　　者：范子雨 索开南[1] FAN Ziyu;SUO Kainan(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《电子工业专用设备》2019年第6期9-12,共4页Equipment for Electronic Products Manufacturing

摘　　要：通过低压力化学气相沉积(LPCVD)法生长SiO2薄膜炉膛内部温度分布、TEOS源温度设置、炉内压力以及待生长硅片在炉膛内摆放位置等工艺条件变化对所生长薄膜质量的影响进行了多方面的分析,总结出工艺条件与SiO2薄膜淀积速率、片内和片间均匀性以及批量生产成本的关系,得出了最佳工艺路线,实现批次化生产中既能保证工艺的稳定,又最大化地降低生产成本。并通过调整工艺和加强设备维修保养等手段解决了LPCVD法生长SiO2薄膜后的抛光片容易产生颗粒的问题,使硅抛光片实现了开盒即用。In this paper,the influence of the temperature distribution inside the SiO2 thin film furnace by LPCVD,the pressure in the furnace and the position of the silicon wafer in the furnace on the quality of the grown film is analyzed in many aspects,such as the temperature setting,the pressure in the furnace and the position of the silicon wafer in the furnace. The relationship between process conditions and SiO2 film deposition rate,in-chip and inter-chip uniformity as well as batch production cost is summarized,so as to find the best process route and to ensure the stability of the process and maximize the reduction of production cost in batch production. In addition,this paper solves the problem of LPCVD by adjusting the process and strengthening the maintenance of equipment. It is easy to produce particles in the polishing wafer after long SiO2 film,which makes the silicon polishing wafer open box.

关 键 词：低压力化学气相沉积法 薄膜 淀积 正硅酸乙酯源 

分 类 号：TN304.055[电子电信—物理电子学]