长波碲镉汞探测器工作温度对输出图像的影响  

Influence of Operating Temperature of Long-Wave HgCdTe Detector on Output Image

作　　者：张小倩 王亮[1] ZHANG Xiao-qian;WANG Liang(th Institute of China Electronics Technology Group Corporation,Beijing 100015,China)

机构地区：[1]中国电子科技集团第十一研究所

出　　处：《红外》2019年第9期12-17,共6页Infrared

摘　　要：为分析长波碲镉汞探测器在高低温环境下盲元增加的问题,通过试验对长波碲镉汞探测器组件进行测试,并观察输出图像。可以发现,改变环境温度后,经探测器校正的所得图像发生变化。分析原因并对其进行了试验验证。结果表明,环境温度会影响探测器的输出图像及性能,即芯片的工作温度变化会引起暗电流和波长变化。In order to analyze the problem of the increase of blind elements in the long-wave HgCdTe detector under high and low temperature environments,the long-wave HgCdTe detector assembly is tested through experiments and the output images are observed.It can be found that the corrected detector image changes after changing the ambient temperature.Analyze the cause and verify it experimentally.The results show that the ambient temperature can affect the output image and performance of the detector,that is,changes in the operating temperature of the chip can cause changes in dark current and wavelength.

关 键 词：碲镉汞 环境温度 盲元 暗电流 

分 类 号：TN2[电子电信—物理电子学]