射频功率对MgO掺杂镓锌氧化物薄膜性能的影响（英文）  

Effect of radio-frequency power on the characteristics of MgO doped gallium-zinc oxide thin films

作　　者：顾锦华 陆轴 朱雅 陈首部[2] GU Jinhua;LU Zhou;ZHU Ya;CHEN Shoubu(Experimental Teaching and Laboratory Management Center,South-Central University for Nationalities,Wuhan 430074,China;College of Electronic Information Engineering,South-Central University for Nationalities,Wuhan 430074,China)

机构地区：[1]中南民族大学实验教学与实验室管理中心,武汉430074 [2]中南民族大学电子信息工程学院,武汉430074

出　　处：《中南民族大学学报（自然科学版）》2019年第4期572-577,共6页Journal of South-Central University for Nationalities：Natural Science Edition

基　　金：湖北省自然科学基金资助项目(2011CDB418);中央高校基本科研业务费专项资金资助项目(CZP17002)

摘　　要：采用磁控溅射技术制备了MgO掺杂镓锌氧化物薄膜样品,通过X射线衍射(XRD)、电阻率、载流子浓度和Hall迁移率测试分析,研究了射频功率对薄膜样品微观结构和电学特性的影响.实验结果表明,所有样品均为六角纤锌矿结构并具有明显的c轴择优取向生长特点,其微观结构和电学特性与射频功率密切相关.当射频功率为125 W时,所制备薄膜的晶粒尺寸最大为52.1 nm、张应力最小为0.082 GPa、电阻率最低为1.54×10^-3Ω·cm、载流子浓度最大为5.26×10^20cm^-3、Hall迁移率最高为7.41 cm^2·V^-1·s^-1,具有最优的结晶性质和电学性能.The thin films of MgO doped gallium-zinc oxide were prepared using magnetron sputtering technique.The effect of radio-frequency power on the microstructure and electrical characteristics of the deposited thin films was investigated by X-ray diffraction(XRD),electrical resistivity,carrier concentration and Hall mobility measurements.The experimental results demonstrate that all the deposited thin films have hexagonal wurtzite structure with highly c-axis orientation.The radio-frequency power significantly affects the microstructure and electrical characteristics of the deposited thin films.When the radio-frequency power is 125 W,the thin film possesses the best crystalline quality and electrical characteristics,with the largest crystallite size of 52.1 nm,the minimum tensile stress of 0.082 GPa,the lowest electrical resistivity of 1.54×10^-3Ω·cm,the maximum carrier concentration of 5.26×10^20cm^-3 and the highest Hall mobility of 7.41 cm^2·V^-1·s^-1.

关 键 词：镓锌氧化物 掺杂 电学性能 

分 类 号：O472[理学—半导体物理]