InAs/GaAsSb带间级联中波红外焦平面研究  

Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays

作　　者：周易[1] 柴旭良 田源 徐志成[1] 黄敏 许佳佳[1] 黄爱波[1] 白治中[1] 陈红雷 丁瑞军[1] 陈建新[1] 何力[1] ZHOU Yi;CHAI Xu-Liang;TIAN Yuan;XU Zhi-Cheng;HUANG Min;XU Jia-Jia;HUANG Ai-Bo;BAI Zhi-Zhong;CHEN Hong-Lei;DING Rui-Jun;CHEN Jian-Xin;HE Li(Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;University of Chinese Academy of Science,Beijing 100049,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049

出　　处：《红外与毫米波学报》2019年第6期745-750,共6页Journal of Infrared and Millimeter Waves

基　　金：国家重点研发计划(2016YFB0402403);国家自然科学基金(61974152,61904183,61534006,61505237,61505235);中国科学院青年创新促进会会员资助(2016219)~~

摘　　要：针对高工作温度红外探测器的迫切需求,设计并利用分子束外延技术制备了高晶格质量的2级带间级联中波红外探测材料,带间级联单元器件在最高323 K下可以测试到清晰的响应光谱,140 K下暗电流密度达到4×10^-5A/cm^-2.并在此基础上利用干法刻蚀技术实现了320×256规模的台面型带间级联红外焦平面原型器件.焦平面测试结果表明其在80-120K范围内量子效率达到30%,127 K下噪声等效温差为55.1 mK,盲元率为2.3%.采用该焦平面器件在127 K下获得了较为清晰的演示性室温目标红外热成像.Mid-wavelength infrared interband cascade photodetectors(ICIP)for high operation temperature applications were designed and grown in molecular beam epitaxy(MBE)system.Clear optical response was measured even at a temperature of 323 K,and the dark current density was 4×10^-5A/cm^-2 at 140 K for single element device.Based on great material quality of the two-stage ICIP,320×256 focal plane arrays(FPA)were demonstrated using dry etching.The FPA has a quantum efficiency of30%from 80 K to 120 K.At 127 K,the device has a noise equivalent temperature difference(NETD)of 55.1 mK and dead pixel rate of 2.3%.Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K.

关 键 词：光电探测器 红外焦平面 带间级联结构 高工作温度 

分 类 号：TN304.2[电子电信—物理电子学] TN305