Study on sputtering Zn（O,S）buffer layers for eco-friendly Cu（In,Ga）Se2 solar cells  

作　　者：SHI Si-han FAN Yu HE Zhi-chao ZHOU Zhi-qiang LIU Fang-fang ZHANG Yi TANG An-dong SUN Yun LIU Wei 史思涵;范玉;何志超;周志强;刘芳芳;张毅;汤安东;孙云;刘玮(Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology and Nankai University,Tianjin 300350,China;Hanergy Heyuan Mobile Energy Intelligence Manufacture Base,Beijing 100031,China)

机构地区：[1]Tianjin Key Laboratory of Thin Film Devices and Technology,Institute of Photoelectronic Thin Film Devices and Technology and Nankai University,Tianjin 300350,China [2]Hanergy Heyuan Mobile Energy Intelligence Manufacture Base,Beijing 100031,China

出　　处：《Optoelectronics Letters》2019年第6期435-438,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61774089,51572132 and 61504067);the Yang Fan Innovative&Entrepreneurial Research Team Project(No.2014YT02N037)

摘　　要：An eco-friendly Zn(O,S) film with a wider band gap is emerging as one of the promising Cd-free replacement material,which can be deposited by radio frequency sputtering.The effect of sputtering pressure on the Zn(O,S) films properties and the devices performance are studied systematically.At high pressure,the ZnS phase is found in the Zn(O,S) films resulting in a higher barrier at Zn(O,S)/CIGS interface which would lead to a low recombination activation energy(Ea).By reducing sputtering pressure,single phase of Zn(O,S) films are conducive to carrier transport as well as promote the films electric properties,ultimately improving the performance of Zn(O,S)/CIGS solar cells.

关 键 词：FILMS SPUTTERING interface 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TM914.4[电气工程—电力电子与电力传动]