氩离子刻蚀对TFA-MOD法YBa2Cu3O7–x薄膜性能的影响研究  

Argon Ion Etching on Property of YBa2Cu3O7–x Thin Films Prepared by TFA-MOD Process

作　　者：罗志永 廖楚剑 蔡传兵[1] 刘志勇[1] 李敏娟 鲁玉明[1] LUO Zhi-Yong;LIAO Chu-Jian;CAI Chuan-Bing;LIU Zhi-Yong;LI Min-Juan;LU Yu-Ming(Shanghai High Temperature Superconducting Key Laboratory,Department of Physics,College of Science,Shanghai University,Shanghai 200444,China)

机构地区：[1]上海大学理学院物理系上海市高温超导重点实验室

出　　处：《无机材料学报》2019年第12期1279-1284,共6页Journal of Inorganic Materials

基　　金：国家重点研发计划(2016YFF0101701);上海市科学技术委员会(16521108400,16DZ0504300,14521102800);国家自然科学基金(51572165,11174193)~~

摘　　要：TFA-MOD工艺制备的YBa2Cu3O7-x(YBCO)薄膜有独特的生长机制,高温晶化后的YBCO薄膜表面存在一层由Ba-Cu-O异质相及a轴生长的YBCO晶粒组成的杂质层。为了满足零电阻超导焊接和超导带材钎焊搭接的研究需要,在不破坏超导特性和晶体结构的前提下,采用Ar离子对TFA-MOD工艺制备的YBCO薄膜进行刻蚀,对薄膜进行纳米级的减薄,实现对薄膜表面杂质的去除。利用拉曼光谱、扫描电子显微镜和X射线衍射等方法对不同刻蚀时间下的薄膜状态进行表征。结果表明,1.3μm厚的YBCO薄膜表面杂质层厚度约为220 nm,并且在过度刻蚀的情况下,YBCO薄膜仍然是c轴取向,晶体结构没有被破坏。刻蚀后,薄膜内部氧空位缺陷的产生会造成超导转变及载流性能的降低,但通过吸氧处理后薄膜性能可恢复。An impurity layer composed by Ba-Cu-O heterogeneous phase and a-axis YBCO crystal grains exists on the surface of the YBCO film after high-temperature crystallization,due to the unique growth mechanism of the YBCO film prepared by the TFA-MOD method.For the research of zero resistance superconducting welding and conventional resistance welding,we etched the YBCO film with Ar ion,decreasing the thickness of the film and removing the impurity layer without destroying the superconductivity and crystal structure.The Raman spectros-copy and scanning electron microscopy were used to research the states of the film with difference etching time.The results showed that the surface impurity layer of the 1.3μm YBCO film was about 220 nm.The YBCO film was still crystal and c-axis oriented,though over etching.After etching,the oxygen vacancy defects in the film in-creased,causing the decrease of superconducting transition and current carrying performance.It can be solved by oxygen-absorbing treatment.

关 键 词：YBCO薄膜 杂质 刻蚀 超导性能 

分 类 号：TQ174[化学工程—陶瓷工业]