一种基于0.18μm CMOS工艺抗辐照压控振荡器  

A Radiation-Hardened Voltage Controlled Oscillator Based on 0.18 μm CMOS Process

作　　者：杨朋博 罗萍[1] 肖皓洋 李博 凌荣勋 YANG Pengbo;LUO Ping;XIAO Haoyang;LI Bo;LING Rongxun(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of.Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室

出　　处：《微电子学》2019年第6期807-811,共5页Microelectronics

摘　　要：采用0.18μm CMOS工艺,设计了一种抗辐照压控振荡器。分析了总剂量辐照下普通压控振荡器输出频率出现较大偏差甚至失效的原因。针对辐照下NMOS管的泄漏电流,提出了漏电流补偿技术。基于该技术,提出了一种工作频率在0.5~1 MHz的抗辐照压控振荡器。仿真结果表明,与普通压控振荡器相比,该压控振荡器在输出频率和占空比的稳定性与准确性方面有较大提升。A radiation-hardened voltage controlled oscillator was designed in a 0.18μm CMOS process.The reasons for large offset or even failure of the voltage controlled oscillator’s output frequency in total ionizing dose irradiation were analyzed.Therefore,the leakage current compensation technique was proposed for the leakage current of the irradiated NMOS.Based on this technology,a radiation-hardened voltage controlled oscillator operating in the range of 0.5 MHz to 1 MHz was proposed.The simulation results showed that the stability and accuracy of output frequencies and duty cycles of the proposed voltage controlled oscillator were greatly improved when compared with those of the conventional voltage controlled oscillators in the simulation of total dose radiation.

关 键 词：压控振荡器 抗辐照设计 漏电流补偿 总剂量效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]