降低高k介质层微粒污染的工艺研究  

Study on the Technology of Reducing Particle Pollution in High k Dielectric Layer

作　　者：强毅博 明安杰[2,3] 陈彦伯 何崇敏 王玮冰 QIANG Yibo;MING Anjie;CHEN Yanbo;HE Chongmin;WANG Weibing(School of Microelectronics,University of Chinese Academy of Sciences,Beijing 100029,P.R.China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,P.R.China;General Research Institute for Nonferrous Metals,State Key Laboratory of Intelligent Sensing Functional Materials,Beijing 100088,P.R.China;Semiconductor Manufacturing International Corporation,Shanghai 201203,P.R.China)

机构地区：[1]中国科学院大学微电子学院,北京100029 [2]中国科学院微电子研究所,北京100029 [3]有研科技集团有限公司智能传感功能材料国家重点实验室,北京100088 [4]中芯国际集成电路制造有限公司,上海201203

出　　处：《微电子学》2019年第6期878-882,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61874137)

摘　　要：随着集成电路制造技术节点进一步缩减,高k介质层金属栅工艺得到广泛应用。该工艺中,减少高k介质层淀积的微粒污染对后续膜层的生长质量至关重要。采用原子层淀积法生长了高k的HfO2层。针对高k层表面容易引入微粒污染的问题,采取了改变HfO2淀积过程反应物H2O、HfCl4的脉冲时间和冲洗时间的方法。当H2O的冲洗时间增加量为3000 ms时,微粒数量、杂质Cl离子含量显著降低。该工艺研究对实际工艺中高k层的可靠性、合格率的提高和生产成本的降低均有重要价值。With the further reduction of integrated circuit technology node,HKMG had been widely used.Reducing the surface particle pollution of the high k dielectric layer was crucial for the deposition of subsequent layer.High k dielectric HfO2 layer was deposited by ALD.There were always some particles on the surface of high k layer.We changed the Pulse and Purge Time of HfO2 reaction precursors which were H2O and HfCl4.Number of particles and impurity Cl ion content were significantly reduced after we increased H2O Purge Time by 3000 ms.It was significant to improve the high k layer reliability and qualification rate and reduce production cost by this process study in the practical process.

关 键 词：高k金属栅 原子层淀积 微粒污染 

分 类 号：TN305[电子电信—物理电子学]