原子层沉积技术选择性修饰Mo/HZSM-5对甲烷无氧芳构化反应的影响  

Selective modification of Mo/HZSM-5 by atomic layer deposition and effects on methane dehydroaromatizatioin

作　　者：陈长胜 张斌[1] 覃勇[1] CHEN Chang-sheng;ZHANG Bin;QIN Yong(State Key Laboratory of Coal Conversion,Institute of Coal Chemistry of Chinese Academy of Sciences,Taiyuan 030001,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院山西煤炭化学研究所,煤转化国家重点实验室,山西太原030001 [2]中国科学院大学,北京100049

出　　处：《现代化工》2019年第12期191-195,共5页Modern Chemical Industry

摘　　要：利用原子层沉积(ALD)技术选择性沉积SiO2于Mo/HZSM-5催化剂外表面,制备一系列硅修饰的Mo/HZSM-5催化剂,并考察其催化甲烷无氧芳构化反应的性能。通过XRD、NH3-TPD、BET、XPS、TEM等表征手段对其进行表征,结果发现,ALD沉积二氧化硅于Mo/HZSM-5后,SiO2主要沉积于催化剂外表面,催化剂中强酸含量下降,提高了催化剂催化甲烷无氧芳构化性能。Atomic layer deposition(ALD)technique is used to deposit SiO2 selectively onto the external surface of Mo/HZSM-5 to prepare a series of SiO2-modified Mo/HZSM-5 catalysts.The performances of prepared Mo/HZSM-5 catalysts are evaluated through methane dehydroaromatizatioin.By means of XRD,NH3-TPD,BET,XPS,TEM and other characterization measures,it is found that SiO2 is mainly deposited on the external surface of the catalyst,and the content of strong acid in the catalyst decreases,thus improving the catalyst’s performance in methane dehydroaromatizatioin.

关 键 词：原子层沉积 氧化硅 烷无氧芳构化 

分 类 号：O643.38[理学—物理化学]