多晶硅凝固界面形态演化过程的相场法模拟分析  

Interface Morphology Evolution Process of Solidification for Multicrystalline Silicon Using Phase-field Method

作　　者：袁训锋[1] 杨燕 刘飞 YUAN Xun-feng;YANG Yan;LIU Fei(Research Center for Distributed New Energy Application Technology of Shangluo,Shangluo University,Shangluo 726000,China;College of Mathematics and Computer Application,Shangluo University,Shangluo 726000,China)

机构地区：[1]商洛学院商洛市分布式新能源应用技术研究中心,商洛726000 [2]商洛学院数学与计算机应用学院,商洛726000

出　　处：《科学技术与工程》2019年第34期123-128,共6页Science Technology and Engineering

基　　金：商洛市科技局创新团队(SK2017-46);商洛学院根植地方行动计划项目(gz201833)资助

摘　　要：采用有限差分法求解小平面晶生长Wheeler相场模型,对多晶硅凝固界面形态演化过程进行相场模拟,详细分析了初始晶核条件、扰动强度和时间步长对界面形态演化的影响。结果表明:在多晶硅凝固过程中,九个晶核初始条件下,固液界面比较平坦,晶核生长空间差异小,易于形成垂直于生长界面的棱角胞晶组织。随着扰动强度的增加,棱角胞晶出现侧向分支,根部缩颈严重甚至出现熔断现象。选择强度为0.01的界面扰动,能够真实再现多晶硅凝固界面形态演化过程。在保证计算结果稳定性条件下,增加时间步长能够提高相场模拟计算效率。The Wheeler model with faceted dendrite growth has been used to simulate the interface morphology evolution process of solidification for multicrystalline silicon by the finite difference method.The effects of initial nucleus,disturbance intensity and time step on the evolution process of interface morphology were studied.The results show that during the solidification process of multicrystalline silicon,under the initial conditions of nine nucleus,the solid-liquid interface are relatively flat,the difference of nucleus growth space is small,and it is easy to form facet cellular crystal structure which is perpendicular to the growth interface.With an increase in disturbance intensity,the side-branching occurs in facet cellular crystal,the root necking is serious and even occurs fusing.The interface disturbance with 0.01,that can truly reproduce the evolution process of polycrystalline silicon solidification interface morphology.Under the condition of guaranteeing the stability of calculation results,the time step can be increased to improve the efficiency of phase field simulation.

关 键 词：相场法 多晶硅 凝固 界面形态 

分 类 号：TG244.3[金属学及工艺—铸造]