射频磁控溅射不锈钢衬底AlN薄膜的制备与特性研究  被引量:2

Fabrication and Characterization of AlN Thin Films on Stainless Steel Substrates by RF Magnetron Sputtering

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作  者:樊志琴[1] 陈飞跃 FAN Zhi-qin;CHEN Fei-yue(College of Science,Henan University of Technology,Zhengzhou 450001,China)

机构地区:[1]河南工业大学理学院

出  处:《人工晶体学报》2019年第12期2201-2206,共6页Journal of Synthetic Crystals

摘  要:利用正交实验设计方法,采用射频磁控溅射法在不锈钢衬底上制备了AlN薄膜,并利用XRD、激光拉曼光谱、荧光光谱等技术对AlN薄膜的结构及发光特性进行了表征。通过实验数据分析,得出如下结论:利用射频磁控溅射法在不锈钢衬底上制备的纤锌矿结构AlN薄膜,在所有参数下,(100)面最易生长;在溅射功率为300~400 W、衬底温度为100~200℃、氮气流量百分比为30%、溅射时间为1 h时,制备出的AlN薄膜结晶状况较好。制备出的AlN薄膜没有明显的拉曼峰,但不锈钢衬底不仅有拉曼峰,而且在紫外区有很强的荧光发射峰。在不锈钢上镀膜后,拉曼峰的强度有所变化并且伴随着频移。By orthogonal experiments method,AlN thin films were prepared on stainless steel substrates by RF magnetron sputtering under different process parameters.The structures and properties of AlN thin films were characterized by XRD,Raman spectroscopy,and fluorescence spectra.Through analysis of the experimental data,the conclusions were drawn:The AlN thin film is prepared on a stainless steel substrate by RF magnetron sputtering,the(100)plane is most likely to grow;when the sputtering power is 300-400 W,the substrate temperature is 100-200℃,nitrogen Percentage of flow is 30%,the time is 1 h,which is favorable for the formation of(100)and(110)plane.The prepared AlN films have no obvious Raman peaks,but stainless steel substrates not only have Raman peaks,but also have strong fluorescence emission peaks in the ultraviolet region.After coating on stainless steel,the intensity of Raman peak changes and frequency shift.

关 键 词:ALN薄膜 射频磁控溅射 XRD 荧光光谱 拉曼光谱 

分 类 号:TB383[一般工业技术—材料科学与工程]

 

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