Ⅲ-Ⅴ/Si混合集成波导高效耦合的容差范围  

Tolerance Range of the Ⅲ-Ⅴ/Si Hybrid Integrated Waveguide for High Efficiency Coupling

作　　者：王天甲 张瑞英[2,3] 王杰[2,3] Wang Tianjia;Zhang Ruiying;Wang Jie(School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China;Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China;Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]中国科学技术大学纳米技术与纳米仿生学院,合肥230026 [2]中国科学院苏州纳米技术与纳米仿生研究所,江苏苏州215123 [3]中国科学院多功能材料与轻巧系统重点实验室,江苏苏州215123

出　　处：《半导体技术》2019年第12期925-931,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51202284);江苏省重点研发计划(产业前瞻与共性关键技术)资助项目(BE2016083);江西省自然科学基金资助项目(2019ACBL20054)

摘　　要：Ⅲ-Ⅴ/Si混合集成的反馈外腔半导体光源及其相关集成器件成为近年来的研究热点,大容差范围是该类器件提高成品率和降低制备成本的有效途径。采用有限差分光束传播法,针对应用于大尺寸Ⅲ-Ⅴ/Si混合集成波导的双锥形耦合器结构进行了仿真,研究了实现高效耦合结构参数容差范围。结果表明,当Ⅲ-Ⅴ材料有源波导中缓冲层厚度为0.5~0.7μm,有源波导锥形区长度为400~800μm,锥形区尖部宽度为0.5~0.55μm,有源波导增益区宽度为2.9~3.1μm,无源波导锥形区的长度超过500μm,有源波导相对于Si波导的偏移量小于1μm时,Ⅲ-Ⅴ/Si混合集成波导的耦合效率均可达到90%以上。研究双锥形Ⅲ-Ⅴ/Si波导高效耦合参数的容差范围可为下一步制备出高效耦合的该类大尺寸混合集成器件提供参考。Ⅲ-Ⅴ/Si hybrid integrated feedback external cavity semiconductor light source and related integrated devices have become research hotspots in recent years.The large tolerance range is an effective way to improve the yield and reduce the manufacturing cost of the devices.The finite-difference beam propagation method was used to simulate the dual taper coupler structure applied to the large-sizeⅢ-Ⅴ/Si hybrid integrated waveguide,and the tolerance range of the high-efficiency coupling structure parameter was studied.The results show that the coupling efficiency of theⅢ-Ⅴ/Si hybrid integrated waveguide can be achieved at least 90%when the thickness of the buffer layer in theⅢ-Ⅴmaterials active waveguide is 0.5-0.7μm,the length of the active waveguide cone is 400-800μm,the width of the tapered tip is 0.5-0.55μm,the width of the waveguide gain region is 2.9-3.1μm,the length of the tapered portion of the passive waveguide exceeds 500μm,and the offset of the active waveguide relative to the Si waveguide is less than 1μm.The tolerance range study of the high efficiency coupling parameters of the dual taperⅢ-Ⅴ/Si waveguide can provide a reference for the preparation of such large-scale hybrid integrated devices with high efficiency coupling.

关 键 词：Ⅲ-Ⅴ/Si混合集成波导 耦合效率 双锥形耦合器 有限差分光束传播法(FD-BPM) 容差范围 

分 类 号：TN256[电子电信—物理电子学] TN304.12