基于IPD工艺的高通滤波器芯片设计  

High-Pass Filter Chip Design based on IPD Process

作　　者：易康 邢孟江[1] 侯明[1] 李小珍 代传相 YI Kang;XING Meng-jiang;HOU Ming;LI Xiao-zhen;DAI Chuan-xiang(School of Information Engineering and Automation,Kunming University of Science and Technology,Kunming Yunnan 650500,China;Department of Information and Technology,Kunming University,Kunming Yunnan 650500,China)

机构地区：[1]昆明理工大学信息工程与自动化学院,云南昆明650500 [2]昆明学院信息技术学院,云南昆明650500

出　　处：《通信技术》2020年第1期230-234,共5页Communications Technology

基　　金：国家自然科学基金项目（No.61564005,No.61864004）~~

摘　　要：设计采用了集成无源器件(Integrated Passive Device,IPD)工艺设计了一款集总式紧凑型椭圆函数高通滤波器。设计采用砷化镓GaAs作为衬底材料,基于寄生参数和等效电路模型对螺旋电感和MIM(金属-介质-金属)电容进行理论分析,并在三维电磁场仿真软件HFSS中进行建模与仿真。经过调试,该模型截止频率9.2 GHz,在9.8 GHz通带上插入损耗小于2 dB,在0~7.2 GHz阻带抑制>30 dB,尺寸仅为640μm×865μm×84μm,有效缩小了无源滤波器的尺寸,验证了基于GaAs IPD工艺的集总式高通滤波器设计的可行性。In this paper,a lumped compact elliptic function high-pass filter is designed based on Integrated Passive Device(IPD)technology.The spiral inductor and MIM(metal-Intermediary-metal)capacitance are analyzed theoretically based on parasitic parameters and equivalent circuit model,and are modeled and simulated in three-dimensional electromagnetic field simulation software HFSS.After debugging,the cut-off frequency of the model is 9.2 GHz,the insertion loss is less than 2 dB in the 9.8 GHz pass band,the stopband rejection is more than 30 dB in the 0~7.2 GHz,and the size of the model is only 640μm×865μm×84μm,which effectively reduces the size of the passive filter.The feasibility of designing lumped high pass filter based on GaAs IPD process is verified.

关 键 词：集成无源器件(IPD) 高通滤波器 砷化镓(GaAs) 寄生参数 螺旋电感 MIM电容 

分 类 号：TN713[电子电信—电路与系统]