集成电路铜互连钌阻挡层异质材料去除选择性的研究  

Study on removal selectivity of heterogeneous ruthenium barrier layer for copper interconnect in integrated circuit

作　　者：王子艳 周建伟 王辰伟 张佳洁 张雪 王超 WANG Ziyan;ZHOU Jianwei;WANG Chenwei;ZHANG Jiajie;ZHANG Xue;WANG Chao(School of Electronic And Information Engineering,Hebei University of Technology,Tianjin 300130,China;不详)

机构地区：[1]河北工业大学电子信息工程学院,天津300130 [2]天津市电子材料与器件重点实验室,天津300130

出　　处：《电镀与涂饰》2020年第1期49-53,共5页Electroplating & Finishing

基　　金：国家中长期科技发展规划02科技重大专项(2009ZX02308)

摘　　要：针对集成电路铜互连钌阻挡层异质材料(包括Cu、Ru、TEOS)在化学机械抛光(CMP)中选择性差的问题,在SiO_(2)-H_(2)O_(2)体系抛光液中研究了(NH_(4))_(2)SO_(4)和2,2′{[(甲基1H苯并三唑1基)甲基]亚氨基}双乙醇(TT)对Cu、Ru、TEOS去除速率的影响,并使用钌阻挡层图形片对抛光液的平坦化性能进行验证。结果表明,(NH_(4))_(2)SO_(4)的添加可以提高Cu、Ru和TEOS的去除速率,进一步加入TT后,Cu的去除速率减小,Ru和TEOS的去除速率基本不变。采用由5%(质量分数,下同)SiO_(2)、0.15%H_(2)O_(2)、40 mmol/L(NH_(4))_(2)SO_(4)和1 g/L TT组成的抛光液对钌阻挡层图形片化学机械抛光30 s后,碟形坑和蚀坑的深度得到了有效降低。Aiming at the problem of poor removal selectivity of heterogeneous materials including Cu,Ru,and TEOS during the chemical mechanical polishing(CMP)process when using Ru as barrier in copper interconnect for integrated circuit manufacturing.The effects of(NH_(4))_(2)SO_(4) and 2,2′-{[(methyl-1H-benzotriazole-1-yl)methyl]imino}bis-ethanol(abbreviated as TT)in a SiO_(2)-H_(2)O_(2) slurry on the removal rates of Cu,Ru,and TEOS were studied.The planarization efficacy of the slurry was verified using patterned wafers with Ru barrier layers.The results showed that the addition of(NH_(4))_(2)SO_(4) increased the removal rates of Cu,Ru,and TEOS.After the addition of TT,the removal rates of Cu was decreased,while the removal rates of Ru and TEOS changed slightly.The depth of dishing and erosion pits was effectively reduced after CMP in the optimized slurry comprising SiO25wt.%,H_(2)O_(2)0.15wt.%,(NH_(4))_(2)SO_(4)40 mmol/L,and TT 1 g/L for 30 s.

关 键 词：铜 钌 二氧化硅 化学机械抛光 硫酸铵 2 2′{[(甲基1H苯并三唑1基)甲基]亚氨基}双乙醇 

分 类 号：TG175[金属学及工艺—金属表面处理]