压电半导体的极化处理及性能研究  

Study on Polarization and Properties of Piezoelectric Semiconductors

作　　者：张鑫[1] 范翠英[1] ZHANG Xin;FAN Cuiying(School of Mechanics and Safety Engineering.Zhengzhou University,Zhengzhou 450001,CHN)

机构地区：[1]郑州大学力学与安全工程学院

出　　处：《半导体光电》2019年第6期842-845,890,共5页Semiconductor Optoelectronics

基　　金：国家自然科学基金项目(11572289)

摘　　要：极化处理是压电半导体材料制备及构件设计中的关键工艺,直接影响着其压电性能。根据夹层极化的方法,研制出一种多样性极化实验装置,解决了压电半导体的极化问题,并对极化后的GaN材料性能进行了系统研究。实验结果表明:(1)极化使GaN材料具备了压电性能,改变了其力电性能参数;(2)极化显著提高了压电半导体的导电能力,改变了其弯曲强度。Polarization is a key process in the fabrication of piezoelectric semiconductor materials,which directly affects their piezoelectric properties.According to the method of interlayer polarization,a multi-polarization experimental device was developed to solve the polarization problem of piezoelectric semiconductors.The performance of GaN after polarization is systematically studied.It is found that the polarization makes GaN materials have piezoelectric properties to affect their mechanical and electrical properties.Polarization significantly improves the conductivity of piezoelectric semiconductors and changes the bending strength.

关 键 词：压电半导体 GAN 极化装置 压电性能 力电性能 

分 类 号：TN304.9[电子电信—物理电子学]