ITO靶材的直流磁控溅射镀膜工艺研究  

Study on DC Magnetron Sputtering Coating Process of ITO Target

作　　者：崔晓芳 吴晓飞 郗雨林[1] CUI Xiaofang;WU Xiaofei;XI Yulin(Luoyang Ship Material Research Institute,Luoyang 471023,China)

机构地区：[1]中国船舶重工集团公司第七二五研究所

出　　处：《材料开发与应用》2019年第6期35-39,共5页Development and Application of Materials

摘　　要：对ITO靶材的直流磁控溅射工艺进行研究,通过正交试验方法确定制备ITO薄膜的最优工艺参数,并明确了溅射温度、氧氩比、溅射气压和溅射功率密度对ITO薄膜电阻率和可见光透过率的影响规律。最优工艺参数为溅射温度370℃,氧氩比0.5/40,溅射气压0.4 Pa,溅射功率密度0.17 W/cm2。薄膜电阻率受各因素影响的主次顺序是:氧氩比>溅射温度>溅射气压>溅射功率密度。薄膜可见光透过率受各因素影响的主次顺序为:溅射温度>溅射气压>氧氩比>溅射功率密度。The DC magnetron sputtering process of ITO target was studied.The optimal process parameters were determined by orthogonal test method,and the effects of sputtering temperature,oxygen-argon ratio,sputtering pressure and sputtering power density on resistivity and visible light transmittance of ITO films were investigated.The optimal sputtering temperature was 370℃,the optimal oxygen-argon ratio 0.5/40,the optimal sputtering pressure 0.4 Pa,and the optimal sputtering power density 0.17 W/cm2.The resistivity of ITO films was affected by various factors,the order of priority was oxygen-argon ratio,sputtering temperature,sputtering pressure and sputtering power density.The priority order of factors affecting the visible light transmit-tance of ITO films was sputtering temperature,sputtering pressure,oxygen-argon ratio and sputtering power density.

关 键 词：ITO靶材 ITO薄膜 直流磁控溅射 

分 类 号：TF124[冶金工程—粉末冶金]