GaN基LED能效的研究进展  

Research Progress on Energy Efficiency of GaN-based LEDs

作　　者：李梦梅 胡小玲[1] 郭伟玲[1] LI Mengmei;HU Xiaoling;GUO Weiling(Optoelectronics Technology Lab,Ministry of Education,Beijing University of Technology,Beijing 100020 China)

机构地区：[1]北京工业大学光电子技术教育部重点实验室

出　　处：《照明工程学报》2020年第1期8-15,共8页China Illuminating Engineering Journal

基　　金：国家自然科学基金(批准号:11674016)

摘　　要：目前GaN已成为制作发光二极管(light emitting diode,LED)的主流材料,GaN基LED在照明和超越照明应用中占有不可替代的重要地位。随着LED外延和芯片技术的提升,LED的能效也得到了快速的提升。本文介绍了影响LED光源能效的因素;叙述了影响LED能效的内量子效率(internal quantum efficiency,IQE)和外量子效率(external quantum efficiency,EQE)的提升技术,阐述了GaN基LED能效的提升进程,最后对LED能效的未来发展进行了总结与展望。At present,GaN has become the mainstream material for fabricating LEDs.GaN-based LED occupies an irreplaceable position in lighting and beyond lighting applications.This paper firstly introduces the factors that affect the energy efficiency of LED light sources.Secondly,The internal quantum efficiency and external quantum efficiency improvement technologies that affect the energy efficiency of LEDs are described separately.Next,the process of improving the energy efficiency of GaN-based LEDs is explained.Finally,the future development of LED energy efficiency is summarized and prospected.

关 键 词：GAN基发光二极管 能效 内量子效率 外量子效率 

分 类 号：TN383.1[电子电信—物理电子学]