200mm硅单晶多线切割工艺及损伤层研究  

Study on Multi-wire Sawing Process and Damage Layer of 200mm Silicon Single Crystal

作　　者：张贺强 李聪 ZHANG Heqiang;LI Cong(The 46th Research Institute of CETC,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《电子工业专用设备》2020年第1期45-49,共5页Equipment for Electronic Products Manufacturing

摘　　要：研究了不同切割工艺对多线切割200 mm(8英寸)硅单晶几何参数的影响,并通过碱腐蚀对200 mm硅切片损伤层进行了分析。结果表明:切割过程中硅片的温度变化及切割线横向振动对几何参数影响较大,480~260μm/min变速切割200 mm硅片几何参数明显要优于530~400μm/min变速切割工艺;480~260μm/min变速切割200 mm硅片WARP能达到14.8μm,BOW能达到4.2μm,TTV能达到10.1μm,且具有更小的均方差值;多线切割200 mm硅片损伤层只有一个区域,经腐蚀观察可确定单面损伤层厚度在9μm左右。In order to research the influence of different slicing process to the geometrical parameters of 200 mm silicon single crystal,and analyze the damage layer of 200 mm silicon wafer with the alkali etching.The results show that the variation temperature and the lateral oscillation of the wire has great effects on the geometrical parameters of 200 mm silicon single crystal,the 480~260μm/min technology has great advantage to the 530~400μm/min technology on the geometrical parameters;Using the 480~260μm/min technology while slicing 200 mm silicon wafer can get the geometrical parameters with WARP:14.8μm,BOW:4.2μm,TTV:10.1μm,and has a smaller mean square deviation;200 mm silicon wafer has only one damage layer with the thickness of about 9μm after Multi-wire sawing.

关 键 词：硅单晶 几何参数 损伤层 多线切割 

分 类 号：TN305.1[电子电信—物理电子学]