基于栅氧化层损伤EEPROM的失效分析  

Failure Analysis of EEPROM Based on Gate-Oxide Layer Damage

作　　者：赵扬 陈燕宁 单书珊 赵明敏[3] Zhao Yang;Chen Yanning;Shan Shushan;Zhao Mingmin(State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology,Beijing Smart-Chip Microeletronics Technology Co.,Ltd.,Beijing 100192,China;Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade,Beijing Smart-Chip Microeletronics Technology Co.,Ltd.,Beijing 100192,China;China Electric Power Research Institute,Beijing 100192,China)

机构地区：[1]北京智芯微电子科技有限公司,国家电网公司重点实验室,电力芯片设计分析实验室,北京100192 [2]北京智芯微电子科技有限公司,北京市电力高可靠性集成电路设计工程技术研究中心,北京100192 [3]中国电力科学研究院,北京100192

出　　处：《半导体技术》2020年第1期72-76,共5页Semiconductor Technology

基　　金：国家电网公司科技项目(GYB17201700325)

摘　　要：随着超大规模集成(VLSI)电路的发展,芯片结构及工艺变得日益复杂,同时给失效分析工作带来了挑战。内嵌式存储器作为片上系统(SOC)内部模块的重要组成部分,其具有结构复杂、密度高等特点,常规的失效分析手段难以准确定位其失效模式和机理。介绍了红外发光显微镜(EMMI)、电压衬度(VC)、去层、聚焦离子束(FIB)的分析原理及组合失效分析技术。针对传统分析手段的不足及局限性,提出了采用一种选择性刻蚀方法对栅氧化层的微小缺陷进行定位与分析。研究结果表明,该方法对分析栅氧化层击穿等缺陷损伤具有明显的优势,可以减少分析时间并提高失效分析成功率。With the development of very large scale integration(VLSI)circuit,structures and process of the chip have become more and more complex,which brings challenges to the failure analysis.As an important part of the system on chip(SOC)internal module,the embedded memory has the characteristics of complex structure and high density,and it is difficult to accurately locate the failure mode and mechanism of the embedded memory with the conventional failure analysis method.The analysis principle and the combined failure analysis technology were introduced,such as the infrared emission microscopy(EMMI),voltage contrast(VC),de-layering and focused ion beam(FIB).In view of the disadvantages and limitations of traditional analysis methods,a selective etching method was proposed to locate and analyze the tiny defects of the gate-oxide layer.The research results show that the method has obvious advantages for defect damage such as gate-oxide layer breakdown,which can reduce the analysis time and improve the success rate of failure analysis.

关 键 词：电可擦可编程只读存储器(EEPROM) 失效分析 电压衬度(VC) 聚焦离子束(FIB) 栅氧化层 缺陷 

分 类 号：TN406[电子电信—微电子学与固体电子学]