基于GaN器件的高速直流无刷电机驱动器  

High-Speed Brushless DC Motor Driver Based on GaN Devices

作　　者：史炳伟 谢门喜[2] SHI Bingwei;XIE Menxi(School of Electronic and Information Engineering,Soochow University,Suzhou 215006,China;Institute of Intelligent Structure and Systems,Soochow University,Suzhou 215006,China)

机构地区：[1]苏州大学电子信息学院,江苏苏州215006 [2]苏州大学智能结构与系统研究所,江苏苏州215006

出　　处：《电机与控制应用》2020年第1期66-70,共5页Electric machines & control application

摘　　要：传统直流无刷电机(BLDCM)驱动器以硅晶体管作为功率器件,工作频率低、开关损耗大,不适用于高速应用场合。宽禁带半导体氮化镓(GaN)晶体管,具有开关速度快、导通电阻小等优势,是高速驱动器的理想选择之一。基于GaN器件,设计了一款20 000 r/min转速的高速BLDCM驱动器。首先介绍了BLDCM驱动的工作原理,然后分析了GaN器件晶体管栅极驱动电阻值的计算过程,选取Si8273作为GaN晶体管GS61008P的驱动芯片,利用霍尔信号配合数字控制器软件得到换相脉冲,以完成高速驱动器的软硬件设计。验结果表明,GaN方案显著减小了驱动器体积,提高了响应速度。Traditional brushless DC motor(BLDCM) drivers which utilize silicon devices, due to the low working frequency and high switch loss, cannot fulfill high-speed applications. Wide-band-gap GaN devices with low turn-on resistance and high switch frequency are the optimum choice for high-speed drivers. A BLDCM driver based on GaN devices is designed. The motor rotation speed of 20 000 r/min is achieved. The BLDCM driver theory is introduced. The GaN devices′ gate-drive resistance is calculated. Choosing gate-drive chip Si8273 to drive GS61008 P and using Hall signal to obtain commutation time, the design of high-speed driver is completed. Experiment results show that GaN devices improve the controller′s response significantly and the size of the controller is also comparatively smaller.

关 键 词：直流无刷电机 高速电机 驱动器 宽禁带半导体 氮化镓 

分 类 号：TM355[电气工程—电机]