一种硅漂移探测器的优化设计与特性研究  

Optimized Structure Design and Electrical Characteristics Study on a Silicon Drift Detector

作　　者：刘瑶光 殷华湘[2,3] 吴次南 许高博 翟琼华[2] LIU Yaoguang;YIN Huaxiang;WU Cinan;XU Gaobo;ZHAI Qionghua(College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China;Key Laboratory of Microelectronics Devices and Integration Technology,Institute of Microelectronics of the Chinese Academy of Sciences,Beijing 100029,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025 [2]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [3]中国科学院大学,北京100049

出　　处：《传感技术学报》2020年第1期7-11,共5页Chinese Journal of Sensors and Actuators

基　　金：中国科学院科研装备研制项目。

摘　　要：硅漂移探测器(SDD)因能量分辨率高和计数率高广泛应用于X射线的探测分析。阐述了同心圆环结构的圆柱形硅漂移探测器的工作原理,基于该结构采用TCAD仿真其内部电势分布、电场分布和电子浓度分布,依照仿真结果对器件结构进行优化,并对所研制的器件电学特性进行了测试分析。结果表明,优化后的硅漂移探测器内部漂移电场较为均匀并且电场强度较强,能够满足探测器的设计需求。Silicon drift detectors(SDDs)are widely used in the detection and analysis of X-ray because of high energy resolution and high count rate.The working principle of the cylindrical silicon drift detector with concentric rings structure was described in this paper.Based on the structure,the internal electric potential distribution,the electric field distribution and the electron concentration distribution were simulated by using TCAD,and the device structure was optimized according to the simulation results,and the electrical characteristics of the device were tested.The results show that the optimized drift electric field of the silicon drift detector is more uniform and the strength it turns larger,which becomes more satisfied with the design requirement of the detector.

关 键 词：半导体探测器 硅漂移探测器 模拟仿真 测试 

分 类 号：TL814[核科学技术—核技术及应用]