宇航用硅基高压快恢复整流二极管单粒子烧毁效应研究  

Single Event Burnout Effect on Silicon-based High Voltage Fast Recovery Rectifier Diodes for Aerospace

作　　者：刘艳秋 张洪伟 于庆奎 石文坤 梅博 李鹏伟 周嵘 曹爽 LIU Yan-qiu;ZHANG Hong-wei;YU Qing-kui;SHI Wen-kun;MEI Bo;LI Peng-wei;ZHOU Rong;CAO Shuang(China Academy of Space Technology,Beijing 100029,China;China Zhenhua Group Yongguang Electronics Co.,Ltd.,Guiyang 550000,China)

机构地区：[1]中国航天科技集团公司第五研究院,北京100029 [2]中国振华集团永光电子有限公司,贵阳550000

出　　处：《装备环境工程》2020年第3期59-64,共6页Equipment Environmental Engineering

摘　　要：目的针对宇航用硅基高压快恢复整流二极管开展单粒子效应研究。方法针对型号常用的各种工艺结构高压快恢复整流二极管系统,研究地面单粒子效应试验方法,包括粒子选择及注量率、单粒子效应检测系统、基于等效制样的单粒子效应试验样品匹配、试验流程,并选取三款典型器件进行单粒子评估试验,根据试验结果对硅基二极管单粒子烧毁失效的机理进行初步分析。结果得出了三款典型器件在各偏置电压下抗单粒子烧毁的LET阈值。结论形成了较为系统的高压二极管单粒子评估的试验方法,并可工程化应用。This paper aims to study the single event effect of silicon-based high voltage fast recovery rectifier diodes for aerospace applications.The ground single event test method was studied for the high voltage fast recovery rectifier diodes with various types of commonly used process structures,including ion selection and flux rate,single event effect detection system,sample matching based on equivalent sample preparation and test flow.Three typical devices were selected for single event evaluation test.The single event evaluation test was carried out for selected typical devices.The mechanism of single event burnout failure of silicon-based diodes was analyzed initially based on the test result.The single particle burned LET threshold of the three typical devices under different bias voltage resistance was obtained.Systematic test methods for singe event evaluation of high voltage diodes are developed and can be applied to engineering.

关 键 词：高压二极管 硅基二极管 单粒子效应 

分 类 号：V416[航空宇航科学与技术—航空宇航推进理论与工程]