Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane  

作　　者：Ying-Hui Zhong Bo Yang Ming-Ming Chang Peng Ding Liu-Hong Ma Meng-Ke Li Zhi-Yong Duan Jie Yang Zhi Jin Zhi-Chao Wei 钟英辉;杨博;常明铭;丁芃;马刘红;李梦珂;段智勇;杨洁;金智;魏志超(School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;China Academy of Space Technology,Beijing 100086,China)

机构地区：[1]School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450001,China [2]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [3]China Academy of Space Technology,Beijing 100086,China

出　　处：《Chinese Physics B》2020年第3期455-459,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.11775191,61404115,61434006,and 11475256);the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)。

摘　　要：An anti-radiation structure of In P-based high electron mobility transistor(HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current(DC) and radio frequency(RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 10^(11) cm^(-2),1× 10^(12) cm^(-2), and 5× 10^(12) cm^(-2). DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 10^(12) cm^(-2). Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.An anti-radiation structure of In P-based high electron mobility transistor（HEMT） has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of In P-based HEMTs. Moreover, direct current（DC） and radio frequency（RF） characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5× 1011 cm-2,1× 1012 cm-2, and 5× 1012 cm-2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5× 1012 cm-2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

关 键 词：InP-based HEMT ANTI-RADIATION proton irradiation Si-doped PLANE 

分 类 号：TN386[电子电信—物理电子学]