320×256 InAs/GaSb超晶格中/短波双色探测器组件研制  

320×256 mid-/short-wavelength dual-color infrared detector based on InAs/GaSb superlattice

作　　者：吕衍秋[1,2,3] 彭震宇 曹先存[1,2,3] 何英杰 李墨 孟超[1,2,3] 朱旭波 Lv Yanqiu;Peng Zhenyu;Cao Xiancun;He Yingjie;Li Mo;Meng Chao;Zhu Xubo(China Airborne Missile Academy,Luoyang 471099,China;Aviation Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471099,China;The Engineering Center for Antimonide-based Infrared Detector Research of Henan Province,Luoyang 471099,China)

机构地区：[1]中国空空导弹研究院,河南洛阳471099 [2]红外探测器技术航空科技重点实验室,河南洛阳471099 [3]河南省锑化物红外探测器工程技术研究中心,河南洛阳471099

出　　处：《红外与激光工程》2020年第1期64-68,共5页Infrared and Laser Engineering

摘　　要：InAs/GaSb超晶格材料制备的新型红外器件在最近十几年得到了迅速发展。文中开展了InAs/GaSb二类超晶格中/短波双色焦平面探测器组件研制,设计了中/短波双色叠层背靠背二极管芯片结构,用分子束外延技术生长出结构完整、表面平整、低缺陷密度的PNP结构超晶格材料,制备出性能优良的320×256双色焦平面探测器组件,对探测器组件进行了测试分析。结果显示,在77 K下中波二极管RA值达到26.0 kΩ·cm^2,短波的RA值为562 kΩ·cm^2。光谱响应特性表明短波响应波段为1.7~3μm,中波为3~5μm,满足设计要求。双色峰值探测率达到中波3.12×10^11cm·Hz1/2W^-1,短波1.34×10^11cm·Hz1/2W^-1。响应非均匀性中波为9.9%,短波为9.7%。中波有效像元率为98.46%,短波为98.06%。New infrared devices prepared by InAs/GaSb superlattice materials have developed rapidly in the last decade. The paper carries out practical researches on mid-/short-wavelength dual-color infrared detector based on type-II InAs/GaSb superlattice. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy.Finally, 320 ×256 focal plane arrays with excellent performance was fabricated and measured. The RA value of middle-wave channel reached 26 kΩ·cm^2 and the short-wave channel reached 562 kΩ·cm^2 at77 K. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibits a detectivity value of 3.12 ×10^11cm·Hz1/2W^-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibits a detectivity value of 1.34 ×10^11cm·Hz1/2W^-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.

关 键 词：INAS/GASB超晶格 双色 中短波 焦平面阵列 红外探测器 

分 类 号：TN215[电子电信—物理电子学]