基于模型数据库对半导体线宽关键尺寸的蒙特卡罗模拟  

Monte Carlo Simulation of Critical Dimensions of Semiconductor Linewidth Based on Model-Based Library

作　　者：郭鹏 缪泓[1] 邹艳波 丁泽军[3] GUO Peng;MIAO Hong;ZOU Yan-bo;DING Ze-jun(Department of Modern Mechanics,University of Science and Technology of China,Hefei 230026,China;Department of Physics,Xinjiang Normal University,Urumqi 830054,China;Department of Physics,University of Science and Technology of China,Hefei 230026,China)

机构地区：[1]中国科学技术大学近代力学系,合肥230026 [2]新疆师范大学物理系,乌鲁木齐830054 [3]中国科学技术大学物理系,合肥230026

出　　处：《现代应用物理》2020年第1期46-53,共8页Modern Applied Physics

基　　金：国家自然科学基金资助项目(11574289)。

摘　　要：为准确测量半导体线宽,基于电子固体相互作用理论和固体中电子的传输机制,采用蒙特卡罗模拟方法,深入研究了模型数据库方法在半导体线宽关键尺寸测量中的应用。以Si为样品,采用有限元网格法构建了单层梯形样品结构、双层梯形样品结构和双圆角矩形样品结构等复杂形貌的计算模型,研究了顶宽、边墙角及高度等几何参数和不同电子束入射条件对二次电子线扫描信号曲线的影响。结果表明,模型数据库方法在处理关键尺寸扫描电子显微镜中二次电子信号的边缘效应问题时优于经验方法。To accurately measure the semiconductor linewidth,based on the theory of electron-solid interaction and electron transport mechanism in solid,a model-based library(MBL)in measuring the critical dimensions(CD)of semiconductor linewidth is studied by Monte Carlo simulation.Taking Si as an example,the calculation models of single-layer trapezoidal sample structure,double-layer trapezoidal sample structure,and double circular rectangular sample structure are constructed by using the finite element mesh method.The effects of the geometric parameters such as top width,side wall angle,height,and the different electron beam incident conditions on the secondary electron scanning signal are calculated.The results show that the model-based library is better than the empirical algorithm in dealing with the edge effect of the secondary electron signal in the critical dimensions scanning electron microscopy(CD-SEM).

关 键 词：蒙特卡罗模拟 扫描电子显微镜 二次电子 关键尺寸 模型数据库 

分 类 号：O242[理学—计算数学]