初始空位浓度对硅晶圆中V-O2对演变影响的仿真  

Simulation of Effect of Initial Vacancy Concentration on the V-O2 Pair's Evolution in Silicon Monocrystalline Wafer

作　　者：关小军[1] 关宇昕 王善文 GUAN Xiaojun;GUAN Yuxin;WANG Shanwen(School of Material Science and Engineering,Shandong University,Jinan 250061,China;Outpie Partners B V,High Tech Campus,Eindhoven 5656AE,Netherlands)

机构地区：[1]山东大学材料科学与工程学院,山东济南250061 [2]奥派咨询有限责任公司,高科技园区,埃因霍温荷兰5656AE

出　　处：《徐州工程学院学报（自然科学版）》2020年第1期6-11,共6页Journal of Xuzhou Institute of Technology(Natural Sciences Edition)

基　　金：高等学校博士学科点专项科研基金项目(200804220021);山东大学晶体材料国家重点实验室开放课题(KF1303)。

摘　　要：为了揭示初始空位浓度对低温退火的硅晶圆内V-O2对演变的影响,基于所建相场模型及其应用程序,对随机均匀分布的3个初始空位浓度条件下硅晶圆内V-O2对演变进行了模拟研究.结果表明:随着初始空位浓度平均值的减小,V-O2对数量相应减少且变化速率减慢,这与相应的空位浓度演变及其均匀化过程有关;初始空位浓度平均值过低时,V-O2对不能产生.In order to reveal the effect of initial vacancy concentration on the evolution of V-O2 pair in the silicon monocrystalline wafer during low-temperature annealing,the evolutions at three initial vacancy concentrations with the random and uniform distribution were simulated based on the established phase field model and its running program.The results show that the number of V-O2 pair decreases and its change rate slows down with the decrease of initial average vacancy concentration,which is related to the vacancy concentration's evolution and its homogenization process;the V-O2 pair cannot exist when the vacancy concentration is too low.

关 键 词：仿真 硅晶圆 V-O2对 初始空位浓度 

分 类 号：TG111[金属学及工艺—物理冶金]