聚酰亚胺在微电子领域的处理方法  

The Treatment of Polyimide in Microelectronics

作　　者：刘旭东[1] LIU Xu-dong(Institute of Information and Communication,Jilin Province Economic Management Cadre College,Changchun 130021,China)

机构地区：[1]吉林省经济管理干部学院信息传媒学院,吉林长春130021

出　　处：《塑料科技》2020年第1期94-96,共3页Plastics Science and Technology

摘　　要：在微电子封装领域,采用等离子体处理聚酰亚胺(PI),主要考察粗糙度、润湿性及刻蚀速率3个指标。改变PI层粗糙度主要依靠粒子的物理轰击而改变表面微观形貌来实现。随着时间累加,Ar等离子体对PI层轰击作用逐渐增强。改变PI层润湿性主要依靠O2等离子体与PI反应,在PI表面产生OH,进而提高PI层亲水性。随着O2等离子体处理时间增大,水滴角先是逐渐下降,90 s后水滴角基本保持不变。提高PI层的刻蚀速率主要通过在O2中添加四氟化碳(CF4)实现。随着O2中CF4的含量增加,PI的刻蚀速率逐渐增大,并在CF4含量达到20%时,刻蚀速率达到最大,随后刻蚀速率逐渐降低。In the field of microelectronic packaging, polyimide(PI) is treated by plasma.Three indicators such as roughness, wettability and etching rate are mainly investigated. The results show that changing the roughness of the PI layer mainly depends on the physical bombardment of the particles to change the surface micro-morphology. As time accumulates, the bombardment effect of Ar plasma on the PI layer also gradually increases. Changing the wettability of the PI layer mainly relies on the reaction of O2 plasma with PI to generate OH on the surface of PI, thereby increases the hydrophilicity of the PI layer. As the O2 plasma treatment time increases, the water contact angle first decreases gradually, and the water contact angle remains substantially unchanged after 90 s. Increasing the etching rate of the PI layer is mainly achieved by adding CF4 to O2. As the content of CF4 in O2 increases, the etching rate of PI increases gradually, and when the CF4 content reaches 20%, the etching rate reaches the maximum, and then the etching rate gradually decreases.

关 键 词：聚酰亚胺 微电子 粗糙度 润湿性 刻蚀速率 

分 类 号：TQ323.7[化学工程—合成树脂塑料工业]