不同冷屏黑化工艺对红外探测器性能的影响  

Influences of Different Blackening Process of Cold Shield on the Performance of Infrared Detectors

作　　者：付志凯 魏威 张磊[1] 李冬冰[1] FU Zhi-kai;WEI wei;ZHANG Lei;LI Dong-bing(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2019年第11期17-22,共6页Infrared

摘　　要：结合红外探测器的光学性能设计,介绍了利用冷屏黑化层工艺来吸收和抑制杂散辐射的原理。基于同一种冷屏结构,对比了三种不同的表面黑化工艺,并测试分析了冷屏黑化层的表面吸收率等物理性能参数。通过红外探测器性能测试,分析了不同冷屏黑化工艺对红外探测器性能的实际影响。结果表明,在2~14μm波段,2#和3#冷屏黑化工艺的表面吸收率的一致性较好;在8~11μm波段,它们对红外探测器的杂散辐射具有良好的吸收与抑制效果。Combined with the optical performance design of infrared detectors,the principle of absorbing and suppressing stray radiation using cold shield blackening layer technology is introduced.Based on the same cold shield structure,three different surface blackening processes are compared,and the physical performance parameters such as the surface absorptivity of the cold shield blackened layer are tested and analyzed.Through the performance test of the infrared detector,the actual influence of different cold shield blackening processes on the performance of the infrared detector is analyzed.The results show that the blackening process of 2# and 3# cold shield can achieve better consistency of surface absorptivity in 2-14μm band.And in the 8-11μm band,they have good absorption and suppression of the stray radiation of the infrared detector.

关 键 词：红外探测器 冷屏 黑化工艺 

分 类 号：TN215[电子电信—物理电子学]