一款53~99 GHz硅基毫米波宽带低噪声放大器  

A 53~99 GHz Silicon-based Millimeter Wave Broadband Low Noise Amplifier

作　　者：刘贤栋 苏国东[1] 孙玲玲[1] LIU Xiandong;SU Guodong;SUN Lingling(Institute of Microelectronic CAD,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China)

机构地区：[1]杭州电子科技大学微电子CAD所,浙江杭州310018

出　　处：《杭州电子科技大学学报（自然科学版）》2020年第2期12-16,22,共6页Journal of Hangzhou Dianzi University：Natural Sciences

摘　　要：基于65 nm CMOS工艺,设计一款频率为53~99 GHz的低噪声放大器(低噪放),低噪放采用自定义的T型匹配网络和共源共栅(Cascode)增益单元,实现了毫米波宽带和低噪声性能。仿真结果表明:低噪放的3 dB相对带宽为63.5%,最小噪声系数为3.9 dB,增益为15.75 dB,1 dB压缩点为-12.5 dBm。在CMOS工艺设计的毫米波低噪放中,该放大器拥有较大的相对带宽和较低的噪声系数。Basing on a 65 nm CMOS technology, a low-noise amplifier(LNA) with a frequency of 53~99 GHz is designed. The LNA uses a custom T-type inductance matching network and Cascode gain unit to achieve wide-band and low-noise performance of millimeter wave. The simulation results show that the relative bandwidth of 3 dB is 63.5%, the minimum noise coefficient is 3.9 dB, the gain is 15.75 dB, and the 1 dB compression point is-12.5 dbm. In the millimeter wave LNA designed by CMOS technology, the amplifier has a larger relative bandwidth and a better noise coefficient.

关 键 词：毫米波 低噪声放大器 宽带 共源共栅 

分 类 号：TN409[电子电信—微电子学与固体电子学]