InAs量子点低温盖层对其发光特性的影响  

Photoluminescence Characteristics of InAs Quantum Dots with Low Temperature Cap Layers

作　　者：吴唯 周勇[1] 刘尚军 刘万清[1] 张靖[1] WU Wei;ZHOU Yong;LIU Shangjun;LIU Wanqing;ZHANG Jing(Chongqing Optoelectronics Research Institute.Chongqing 400060,CHN)

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2020年第1期89-92,共4页Semiconductor Optoelectronics

摘　　要：采用金属有机物化学气相淀积(MOCVD)技术生长了InAs量子点及不同组分和厚度的量子点低温盖层,采用光致荧光光谱(PL)和时间分辨荧光发射谱(TRPL)研究了量子点在不同低温盖层下的荧光发光性质。对比了常规方法和速率调制外延(FME)法生长GaAs低温盖层的量子点质量,结果表明,FME法生长低温盖层的量子点荧光发射谱光强更强且发光寿命达到0.6ns,明显优于普通方法生长低温盖层的量子点发光寿命。Metalorganic chemical vapour deposition(MOCVD)was employed to grow InAs quantum dots(QDs)and low temperature QDs caps with different composition and thickness,and photoluminescence(PL)and time-resolved photoluminescence(TRPL)was used to study the characteristics of QDs with different cap layers.Flow-rate modulation epitaxy(FME)and conventional methods were utilized to grow low temperature cap of InAs QDs.Experimental results indicate that the PL intensity of QWs is stronger when the cap was grown by FME,and its TRPL life time reaches 0.6 ns,which is much longer than the samples prepared by the conventional method.

关 键 词：INAS量子点 量子点低温盖层 光致荧光谱 时间分辨谱 速率调制外延 

分 类 号：TN248[电子电信—物理电子学]