ITO靶材在磁控溅射过程中的结瘤诱因分析  

Study on Nodule-forming Causes of ITO Target During Magnetron Sputtering

作　　者：崔晓芳[1] 吴晓飞[1] 郗雨林[1] CUI Xiaofang;WU Xiaofei;XI Yulin(Luoyang Ship Material Research Institute,Luoyang 471023,China)

机构地区：[1]中国船舶重工集团公司第七二五研究所,河南洛阳471023

出　　处：《材料开发与应用》2020年第1期36-39,51,共5页Development and Application of Materials

摘　　要：研究了ITO靶材在磁控溅射过程中的结瘤问题,借助SEM对可能促使结瘤产生的因素进行了分析.结果表明,裂纹、孔隙等缺陷是结瘤产生的主要原因.Causes of nodule formation ITO target during sputtering process were studied by SEM.The results showed that cracks,voids and other defects were the causes of nodule formation.

关 键 词：ITO靶材 结瘤诱因 磁控溅射 

分 类 号：TF124[冶金工程—粉末冶金]